GALLIUM NITRIDE-BASED LIGHT EMITTING DEVICE WITH ROUGHENED SURFACE AND FABRICATING METHOD THEREOF

• US 20090321780A1
• Filed: 06/25/2009
• Published: 12/31/2009
• Est. Priority Date: 06/27/2008
• Status: Abandoned Application

• Current Assignee: Advanced Optoelectronic Technology, Inc.
• Original Assignee: Advanced Optoelectronic Technology, Inc.
• Inventors: TU, PO MIN, YEH, YING CHAO, LIN, WEN YU, WU, PENG YI, CHAN, SHIH HSIUNG, HUANG, SHIH CHENG, HSU, CHIH PENG
• Application Number:
  US12/491,806
• Publication Number:
  US 20090321780A1
• Time in Patent Office: Days
• US Class Current: 257/101
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer.

Claims

1. A gallium nitride-based light emitting device with a roughened surface, comprising:

a substrate;

a buffer layer formed on said substrate;

a III-nitride semiconductor layer of a first conductive type formed on said buffer layer;

a III-nitride semiconductor active layer formed on said III-nitride semiconductor layer of said first conductive type

a first III-nitride semiconductor layer of a second conductive type formed on said III-nitride semiconductor active layer, wherein said first conductive type and said second conductive type are opposite;

a heavily doped III-nitride semiconductor layer of said second conductive type formed on said first III-nitride semiconductor layer of said second conductive type; and

a roughened second III-nitride semiconductor layer of said second conductive type formed on said heavily doped III-nitride semiconductor layer of said second conductive type.

2. The gallium nitride-based light emitting device with a roughened surface according to claim 1, wherein said first conductive type is n-type and said second conductive type is p-type.

3. The gallium nitride-based light emitting device with a roughened surface according to claim 1, wherein said first conductive type is p-type and said second conductive type is n-type.

4. The gallium nitride-based light emitting device with a roughened surface according to claim 2, wherein a concentration of said heavily doped p-type III-nitride semiconductor layer is between about 10²¹-10²²/cm³.

5. The gallium nitride-based light emitting device with a roughened surface according to claim 2, wherein the dopant of said p-type is Mg.

6. The gallium nitride-based light emitting device with a roughened surface according to claim 2, wherein a concentration of said heavily doped n-type III-nitride semiconductor layer is between about 10¹⁹-10²¹/cm³.

7. The gallium nitride-based light emitting device with a roughened surface according to claim 2, wherein the dopant of said n-type is Si.

8. The gallium nitride-based light emitting device with a roughened surface according to claim 1, wherein the material of said heavily doped III-nitride semiconductor layer of said second conductive type is gallium nitride.

9. A method for fabricating a gallium nitride-based light emitting device with a roughened surface, comprising steps of:

forming a buffer layer on a substrate;

forming a III-nitride semiconductor layer of a first conductive type on said buffer layer;

forming a III-nitride semiconductor active layer on said III-nitride semiconductor layer of said first conductive type;

forming a first III-nitride semiconductor layer of a second conductive type formed on said III-nitride semiconductor active layer;

forming a first III-nitride semiconductor layer of a second conductive type on said III-nitride semiconductor active layer;

forming a heavily doped III-nitride semiconductor layer of said second conductive type on said first III nitride semiconductor layer of said second conductive type, wherein said first conductive type and said second conductive type are opposite; and

forming a roughened second III-nitride semiconductor layer of said second conductive type on said heavily doped III-nitride semiconductor layer of said second conductive type.

10. The method for fabricating a gallium nitride-based light emitting device with a roughened surface according to claim 9, wherein the temperature for forming said heavily doped III-nitride semiconductor layer of said second conductive type is greater than 1000°

C.

11. The method for fabricating a gallium nitride-based light emitting device with a roughened surface according to claim 9, wherein said first conductive type is n-type and said second conductive type is p-type.

12. The method for fabricating a gallium nitride-based light emitting device with a roughened surface according to claim 9, wherein said first conductive type is p-type and said second conductive type is n-type.

13. The method for fabricating a gallium nitride-based light emitting device with a roughened surface according to claim 11, wherein a concentration of said heavily doped p-type III-nitride semiconductor layer is between about 10²¹-10²²/cm³.

14. The method for fabricating a gallium nitride-based light emitting device with a roughened surface according to claim 11, wherein the dopant of said p-type is Mg.

15. The method for fabricating a gallium nitride-based light emitting device with a roughened surface according to claim 11, wherein a concentration of said heavily doped n-type III-nitride semiconductor layer is between about 10¹⁹-10²¹/cm³.

16. The method for fabricating a gallium nitride-based light emitting device with a roughened surface according to claim 11, wherein the dopant of said n-type is Si.

17. The method for fabricating a gallium nitride-based light emitting device with a roughened surface according to claim 9, wherein the material of said heavily doped III-nitride semiconductor layer of said second conductive type is gallium nitride.