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GALLIUM NITRIDE-BASED LIGHT EMITTING DEVICE WITH ROUGHENED SURFACE AND FABRICATING METHOD THEREOF

  • US 20090321780A1
  • Filed: 06/25/2009
  • Published: 12/31/2009
  • Est. Priority Date: 06/27/2008
  • Status: Abandoned Application
First Claim
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1. A gallium nitride-based light emitting device with a roughened surface, comprising:

  • a substrate;

    a buffer layer formed on said substrate;

    a III-nitride semiconductor layer of a first conductive type formed on said buffer layer;

    a III-nitride semiconductor active layer formed on said III-nitride semiconductor layer of said first conductive typea first III-nitride semiconductor layer of a second conductive type formed on said III-nitride semiconductor active layer, wherein said first conductive type and said second conductive type are opposite;

    a heavily doped III-nitride semiconductor layer of said second conductive type formed on said first III-nitride semiconductor layer of said second conductive type; and

    a roughened second III-nitride semiconductor layer of said second conductive type formed on said heavily doped III-nitride semiconductor layer of said second conductive type.

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