Triangle two dimensional complementary patterning of pillars
First Claim
1. A method of making a device, comprising:
- forming at least one device layer over a substrate;
forming a plurality of spaced apart first features over the device layer, wherein each three adjacent first features form an equilateral triangle;
forming sidewall spacers on the first features;
filling a space between the sidewall spacers with a plurality of filler features;
selectively removing the sidewall spacers; and
etching the at least one device layer using at least the plurality of filler features as a mask.
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Accused Products
Abstract
A method of making a semiconductor device includes forming at least one device layer over a substrate, forming a plurality of spaced apart first features over the device layer, where each three adjacent first features form an equilateral triangle, forming sidewall spacers on the first features, filling a space between the sidewall spacers with a plurality of filler features, selectively removing the sidewall spacers, and etching the at least one device layer using at least the plurality of filler features as a mask. A device contains a plurality of bottom electrodes located over a substrate, a plurality of spaced apart pillars over the plurality of bottom electrodes, and a plurality of upper electrodes contacting the plurality of pillars. Each three adjacent pillars form an equilateral triangle, and each pillar comprises a semiconductor device. The plurality of pillars include a plurality of first pillars having a first shape and a plurality of second pillars having a second shape different from the first shape.
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Citations
27 Claims
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1. A method of making a device, comprising:
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forming at least one device layer over a substrate; forming a plurality of spaced apart first features over the device layer, wherein each three adjacent first features form an equilateral triangle; forming sidewall spacers on the first features; filling a space between the sidewall spacers with a plurality of filler features; selectively removing the sidewall spacers; and etching the at least one device layer using at least the plurality of filler features as a mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of making a pillar shaped nonvolatile memory device array, comprising:
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forming a plurality of bottom electrodes over a substrate; forming at least one semiconductor device layer over the plurality of bottom electrodes; forming a plurality of spaced apart first features over the at least one semiconductor device layer, wherein each three adjacent first features form an equilateral triangle; forming sidewall spacers on the plurality of spaced apart first features; forming a filler film over and between the plurality of spaced apart first features; planarizing the filler film to expose upper portions of the plurality of spaced apart first features and upper portions of the sidewall spacers to leave a plurality of filler features located between the sidewall spacers; selectively removing the sidewall spacers; etching the at least one semiconductor device layer to form a plurality of pillar-shaped diode containing nonvolatile memory cells using at least the plurality of filler features as a mask; and forming a plurality of upper electrodes contacting the plurality of nonvolatile memory cells. - View Dependent Claims (17, 18, 19, 20, 21)
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22. A device, comprising:
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a plurality of bottom electrodes located over a substrate; a plurality of spaced apart pillars located over the plurality of bottom electrodes; and a plurality of upper electrodes contacting the plurality of pillars; wherein; each three adjacent pillars form an equilateral triangle; each pillar comprises a semiconductor device; and the plurality of pillars comprise a plurality of first pillars having a first shape and a plurality of second pillars having a second shape different from the first shape. - View Dependent Claims (23, 24, 25, 26, 27)
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Specification