SEMICONDUCTOR COMPONENT WITH TWO-STAGE BODY ZONE

• US 20090321818A1
• Filed: 06/30/2008
• Published: 12/31/2009
• Est. Priority Date: 06/30/2008
• Status: Abandoned Application

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Mauder, Anton, Willmeroth, Armin, Kaindl, Winfried
• Application Number:
  US12/164,611
• Publication Number:
  US 20090321818A1
• Time in Patent Office: Days
• US Class Current: 257/330
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A semiconductor component with a two-stage body zone. One embodiment provides semiconductor component including a drift zone, and a compensation zone of a second conduction type. The compensation zone is arranged in the drift zone. A source zone and a body zone is provided. The body zone is arranged between the source zone and the drift zone. A gate electrode is arranged adjacent to the body zone. The body zone has a first body zone section and a second body zone section, which are adjacent to one another along the gate dielectric and of which the first body zone section is doped more highly than the second body zone section.

Claims

1. A semiconductor component comprising:

a drift zone;

a compensation zone, the compensation zone being arranged in the drift zone;

a source zone;

a body zone, the body zone being arranged between the source zone and the drift zone; and

a gate electrode, which is arranged adjacent to the body zone and is dielectrically insulated from the body zone by a gate dielectric;

wherein the body zone has a first body zone section and a second body zone section, which are adjacent to one another along the gate dielectric and of which the first body zone section is doped more highly than the second body zone section.

2. The semiconductor component of claim 1, wherein the first body zone section is adjacent to the source zone.

3. The semiconductor component of claim 1, comprising wherein a ratio between a doping concentration of the first body zone section and a doping concentration of the second body zone section is between 3 and 30.

4. The semiconductor component of claim 1, comprising wherein a ratio between a doping concentration of the first body zone section and a doping concentration of the second body zone section is between 4 and 6.

5. The semiconductor component of claim 1, comprising wherein a first dimension of the first body zone section along the gate electric is smaller than a second dimension of the second body zone section along the gate dielectric.

6. The semiconductor component of claim 1, comprising wherein a ratio between the second dimension and the first dimension is between 0.5 and 5.

7. The semiconductor component of claim 1, comprising wherein the compensation zone is adjacent to the body zone.

8. The semiconductor component of claim 1, comprising:

a drain zone, adjacent to the drift zone at a side remote from the body zone and doped more highly than the drift zone.

9. The semiconductor component of claim 1, realized as a planar component,

wherein the source zone, the body zone, the drift zone and the compensation zone are arranged in a semiconductor body;

and

wherein the gate electrode is arranged above a first side of the semiconductor component.

10. A semiconductor component comprising:

a drift zone of a first conduction type;

a compensation zone of a second conduction type, which is complementary to the first conduction type, the compensation zone being arranged in the drift zone;

a source zone of a first conduction type;

a body zone of the second conduction type, the body zone being arranged between the source zone and the drift zone; and

a gate electrode, which is arranged adjacent to the body zone and is dielectrically insulated from the body zone by a gate dielectric;

wherein the body zone has a first body zone section and a second body zone section, which are adjacent to one another along the gate dielectric and of which the first body zone section is doped more highly than the second body zone section.

11. The semiconductor component of claim 10, wherein the first body zone section is adjacent to the source zone.

12. The semiconductor component of claim 10, comprising wherein a ratio between a doping concentration of the first body zone section and a doping concentration of the second body zone section is between 3 and 30.

13. The semiconductor component of claim 10, comprising wherein a ratio between a doping concentration of the first body zone section and a doping concentration of the second body zone section is between 4 and 6.

14. The semiconductor component of claim 10, comprising wherein a first dimension of the first body zone section along the gate electric is smaller than a second dimension of the second body zone section along the gate dielectric.

15. The semiconductor component of claim 10, comprising wherein a ratio between the second dimension and the first dimension is between 0.5 and 5.

16. The semiconductor component of claim 10, comprising wherein the compensation zone is adjacent to the body zone.

17. The semiconductor component of claim 10, comprising:

a drain zone, adjacent to the drift zone at a side remote from the body zone and doped more highly than the drift zone.

18. The semiconductor component of claim 10, realized as a planar component,

wherein the source zone, the body zone, the drift zone and the compensation zone are arranged in a semiconductor body;

and

wherein the gate electrode is arranged above a first side of the semiconductor component.

19. The semiconductor component of claim 10, realized as a trench component,

wherein the source zone, the body zone, the drift zone and the compensation zone are arranged in a semiconductor body;

and

wherein the gate electrode is arranged in a trench extending into the semiconductor body proceeding from a first side of the semiconductor body.

20. The semiconductor component of claim 10, comprising at least two component cells having in each case a source zone and a body zone, wherein the body zone of a first one of the component cells has a first and a second body zone section and the body zone of a second one of the component cells has only one body zone section.

21. The semiconductor component of claim 20, comprising wherein component cells which have only one body zone section and component cells which have two body zone sections are arranged alternately in a lateral direction of the semiconductor body.

22. The semiconductor component of claim 21, comprising wherein the component cells are strip cells.

23. The semiconductor component of claim 20, comprising wherein a doping concentration of the body zone section of the second component cell corresponds to a doping concentration of the first body zone section of the first component cell.

24. An integrated circuit including a semiconductor component comprising:

a drift zone, a compensation zone, a source zone, a body zone, the body zone and a gate electrode;

wherein the body zone has a first body zone section and a second body zone section, which are adjacent to one another along the gate dielectric and of which the first body zone section is doped more highly than the second body zone section.

25. A method of making a semiconductor component comprising:

forming a drift zone;

forming a compensation zone arranged in the drift zone;

forming a source zone;

forming a body zone between the source zone and the drift zone; and

forming a gate electrode arranged adjacent to the body zone and is dielectrically insulated from the body zone by a gate dielectric;

wherein the body zone has a first body zone section and a second body zone section, which are adjacent to one another along the gate dielectric and of which the first body zone section is doped more highly than the second body zone section.