VERTICAL PROFILE FinFET GATE FORMED VIA PLATING UPON A THIN GATE DIELECTRIC
First Claim
1. A method for forming a transistor, comprising:
- providing a semiconductor topography comprising a semiconductor substrate and a semiconductor fin structure extending above the substrate;
forming a gate dielectric across exposed surfaces of the semiconductor topography;
patterning a mask upon the semiconductor topography such that only a select portion of the gate dielectric is exposed that defines where a gate electrode is to be formed; and
electroplating a metallic material upon the select portion of the gate dielectric to form a gate electrode across a portion of the fin structure.
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Accused Products
Abstract
Methods of making vertical profile FinFET gate electrodes via plating upon a thin gate dielectric are disclosed. In one embodiment, a method for forming a transistor, comprises: providing a semiconductor topography comprising a semiconductor substrate and a semiconductor fin structure extending above the substrate; forming a gate dielectric across exposed surfaces of the semiconductor topography; patterning a mask upon the semiconductor topography such that only a select portion of the gate dielectric is exposed that defines where a gate electrode is to be formed; and plating a metallic material upon the select portion of the gate dielectric to form a gate electrode across a portion of the fin structure.
26 Citations
13 Claims
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1. A method for forming a transistor, comprising:
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providing a semiconductor topography comprising a semiconductor substrate and a semiconductor fin structure extending above the substrate; forming a gate dielectric across exposed surfaces of the semiconductor topography; patterning a mask upon the semiconductor topography such that only a select portion of the gate dielectric is exposed that defines where a gate electrode is to be formed; and electroplating a metallic material upon the select portion of the gate dielectric to form a gate electrode across a portion of the fin structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13-20. -20. (canceled)
Specification