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CMOS DEVICE COMPRISING MOS TRANSISTORS WITH RECESSED DRAIN AND SOURCE AREAS AND A SI/GE MATERIAL IN THE DRAIN AND SOURCE AREAS OF THE PMOS TRANSISTOR

  • US 20090321843A1
  • Filed: 05/12/2009
  • Published: 12/31/2009
  • Est. Priority Date: 06/30/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a transistor formed above a substrate and comprising drain and source regions comprising a strain-inducing semiconductor alloy, said drain and source regions further comprising metal silicide regions having a recessed surface portion that is positioned at a lower height level compared to a height level defined by a surface of a gate insulation layer separating a gate electrode from a channel region of said transistor; and

    a strain-inducing layer formed above said drain and source regions, said strain-inducing layer and said strain-inducing semiconductor alloy inducing the same type of strain in said channel region.

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