MIS FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

• US 20090321854A1
• Filed: 08/22/2007
• Published: 12/31/2009
• Est. Priority Date: 08/24/2006
• Status: Abandoned Application

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Takasu, Hidemi, Ohta, Hiroaki, Otake, Hirotaka
• Application Number:
  US12/310,362
• Publication Number:
  US 20090321854A1
• Time in Patent Office: Days
• US Class Current: 257/411
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/432 Heterojunction gate for field effect devices
• CPC Class Codes: H01L 29/66462 with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/66727 with a step of recessing the source electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H01L 29/802 with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors H01L29/806 takes precedence; with one dimensional electron gas H01L29/775; with dimensional electron gas H01L29/778

Abstract

An MIS field effect transistor includes a nitride semiconductor multilayer structure including a first group III-V nitride semiconductor layer of a first conductivity type, a second group III-V nitride semiconductor layer of a second conductivity type which is arranged on the first group III-V nitride semiconductor layer, and a third group III-V nitride semiconductor layer of the first conductivity type which is arranged on the second group III-V nitride semiconductor layer. A gate insulating film is formed on a wall surface ranging over the first, second and third group III-V nitride semiconductor layers so that the film stretches over the first, second and third group III-V nitride semiconductor layer. A gate electrode made of a conductive material is formed so that it faces the second group III-V nitride semiconductor layer via the gate insulating film. A drain electrode is provided to be electrically connected to the first group III-V nitride semiconductor layer, and a source electrode is provided to be electrically connected to the third group III-V nitride semiconductor layer.

Claims

1-40. -40. (canceled)

41. An MIS field-effect transistor comprising:

a nitride semiconductor multilayer structure portion including a first group III-V nitride semiconductor layer of a first conductivity type, a second group III-V nitride semiconductor layer of a second conductivity type stacked on the first group III-V nitride semiconductor layer and a third group III-V nitride semiconductor layer of the first conductivity type stacked on the second group III-V nitride semiconductor layer;

a gate insulating film formed on a wall surface formed over the first, second and third group III-V nitride semiconductor layers to extend over the first, second and third group III-V nitride semiconductor layers;

a gate electrode made of a conductive material formed as being opposed to the second group III-V nitride semiconductor layer with this gate insulating film interposed therebetween;

a drain electrode electrically connected to the first group III-V nitride semiconductor layer; and

a source electrode electrically connected to the third group III-V nitride semiconductor layer, wherein

the gate insulating film includes a first insulating layer formed in contact with the wall surface, and a second insulating layer stacked on the first insulating layer.

43. The MIS field-effect transistor according to claim 41, wherein

the gate insulating film is an insulating film formed by ECR (electron cyclotron resonance) sputtering.

44. The MIS field-effect transistor according to claim 41, wherein

the gate insulating film is an insulating film continuously formed in a film forming apparatus.

52. The MIS field-effect transistor according to claim 41, wherein

the first layer is made of nitride, and the second layer is made of oxide.

53. The MIS field-effect transistor according to claim 52, wherein

the nitride is silicon nitride, and the oxide is silicon oxide.

42. (canceled)

45-51. -51. (canceled)