SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

• US 20090321869A1
• Filed: 06/05/2009
• Published: 12/31/2009
• Est. Priority Date: 06/25/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: HAYAKAWA, Masahiko, SHISHIDO, Hideaki, FUKUOKA, Osamu
• Granted Patent: US 8,368,145 B2
• Time in Patent Office: Days
• US Class Current: 257/461
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14692 Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12043 Photo diode
• CPC Class Codes: H01L 2924/15788 Glasses, e.g. amorphous oxides, nitrides or fluorides

Abstract

A semiconductor device has a structure including the first semiconductor region 103 which is provided in the first terminal portion 100 and includes the first n-type impurity region 106, the first resistance region 107 provided at an inner periphery portion of the first n-type impurity region 106 in a plane view, and the first p-type impurity region 108 provided at an inner periphery portion of the first resistance region 107 in the plane view, and the second semiconductor region 104 which is provided in the second terminal portion 101 and includes the second p-type impurity region 109, the second resistance region 110 provided at an inner periphery portion of the second p-type impurity region 109 in the plane view, and the second n-type impurity region 111 provided at an inner periphery portion of the second resistance region 110 in the plane view.

Claims

1. A semiconductor device comprising:

a semiconductor region;

a first electrode;

a second electrode;

a first terminal electrically connected to the first electrode; and

a second terminal electrically connected to the second electrode,

wherein the first terminal is provided over the semiconductor region,

wherein the semiconductor region includes;

a first impurity region having one of n-type and p-type conductivity;

a resistance region provided at an inner periphery portion of the first impurity region in a plane view; and

a second impurity region having the other of n-type and p-type conductivity which is provided at an inner periphery portion of the resistance region in the plane view,

wherein the first impurity region is electrically connected to the first electrode, and

wherein the second impurity region is electrically connected to the second electrode.

2. The semiconductor device according to claim 1, further comprising a functional circuit,

wherein a first terminal of the functional circuit is electrically connected to the first electrode, and a second terminal of the functional circuit is electrically connected to the second electrode.

3. The semiconductor device according to claim 2, wherein the functional circuit includes a photoelectric conversion element and an amplifier circuit.

4. The semiconductor device according to claim 1, further comprising a functional circuit,

wherein a plurality of connection portions of the functional circuit and the first electrode is provided,

wherein a plurality of connection portions of the functional circuit and the second electrode is provided,

wherein the plurality of connection portions of the functional circuit and the first electrode has a uniform resistance value, and

wherein the plurality of connection portions of the functional circuit and the second electrode has a uniform resistance value.

5. The semiconductor device according to claim 4, wherein the functional circuit includes a photoelectric conversion element and an amplifier circuit.

6. The semiconductor device according to claim 1,

wherein a plurality of connection portions of the first impurity region and the first electrode is provided,

wherein a plurality of connection portions of the second impurity region and the second electrode is provided,

wherein the plurality of connection portions of the first impurity region and the first electrode has a uniform resistance value, and

wherein the plurality of connection portions of the second impurity region and the second electrode has a uniform resistance value.

7. The semiconductor device according to claim 1, wherein a resistance value of the resistance region is higher than resistance values of the first impurity region and the second impurity region.

8. A semiconductor device comprising:

a semiconductor region;

a first electrode;

a second electrode;

a first terminal electrically connected to the first electrode; and

a second terminal electrically connected to the second electrode,

wherein the second terminal is provided over the semiconductor region,

wherein the semiconductor region includes;

a first impurity region having one of n-type and p-type conductivity;

a resistance region provided at an inner periphery portion of the first impurity region in a plane view; and

a second impurity region having the other of n-type and p-type conductivity which is provided at an inner periphery portion of the resistance region in the plane view,

wherein the first impurity region is electrically connected to the first electrode, and

wherein the second impurity region is electrically connected to the second electrode.

9. The semiconductor device according to claim 8, further comprising a functional circuit,

wherein a first terminal of the functional circuit is electrically connected to the first electrode, and a second terminal of the functional circuit is electrically connected to the second electrode.

10. The semiconductor device according to claim 9, wherein the functional circuit includes a photoelectric conversion element and an amplifier circuit.

11. The semiconductor device according to claim 8, further comprising a functional circuit,

wherein a plurality of connection portions of the functional circuit and the first electrode is provided,

wherein a plurality of connection portions of the functional circuit and the second electrode is provided,

wherein the plurality of connection portions of the functional circuit and the first electrode has a uniform resistance value, and

wherein the plurality of connection portions of the functional circuit and the second electrode has a uniform resistance value.

12. The semiconductor device according to claim 11, wherein the functional circuit includes a photoelectric conversion element and an amplifier circuit.

13. The semiconductor device according to claim 8,

wherein a plurality of connection portions of the first impurity region and the first electrode is provided,

wherein a plurality of connection portions of the second impurity region and the second electrode is provided,

wherein the plurality of connection portions of the first impurity region and the first electrode has a uniform resistance value, and

wherein the plurality of connection portions of the second impurity region and the second electrode has a uniform resistance value.

14. The semiconductor device according to claim 8, wherein a resistance value of the resistance region is higher than resistance values of the first impurity region and the second impurity region.

15. A semiconductor device comprising:

a first semiconductor region;

a second semiconductor region;

a first electrode;

a second electrode;

a third electrode;

a fourth electrode;

a first terminal electrically connected to the second electrode and the third electrode; and

a second terminal electrically connected to the first electrode and the fourth electrode,

wherein the first terminal is provided over the first semiconductor region,

wherein the second terminal is provided over the second semiconductor region,

wherein the first semiconductor region includes;

a first n-type impurity region in contact with the first electrode;

a first resistance region provided at an inner periphery portion of the first n-type impurity region in a plane view; and

a first p-type impurity region which is provided at an inner periphery portion of the first resistance region in the plane view and is in contact with the second electrode, and

wherein the second semiconductor region includes;

a second p-type impurity region in contact with the third electrode;

a second resistance region provided at an inner periphery portion of the second p-type impurity region in the plane view; and

a second n-type impurity region which is provided at an inner periphery portion of the second resistance region in the plane view and is in contact with the fourth electrode.

16. The semiconductor device according to claim 15, further comprising a functional circuit,

wherein a first terminal of the functional circuit is electrically connected to the first terminal, and a second terminal of the functional circuit is electrically connected to the second terminal.

17. The semiconductor device according to claim 16, wherein the functional circuit includes a photoelectric conversion element and an amplifier circuit.

18. The semiconductor device according to claim 15,

wherein a plurality of connection portions of the first n-type impurity region and the first electrode is provided,

wherein a plurality of connection portions of the second n-type impurity region and the fourth electrode is provided,

wherein the plurality of connection portions of the first n-type impurity region and the first electrode has a uniform resistance value, and

wherein the plurality of connection portions of the second n-type impurity region and the fourth electrode has a uniform resistance value.

19. The semiconductor device according to claim 15,

wherein a plurality of connection portions of the first p-type impurity region and the second electrode is provided,

wherein a plurality of connection portions of the second p-type impurity region and the third electrode is provided,

wherein the plurality of connection portions of the first p-type impurity region and the second electrode has a uniform resistance value, and

wherein the plurality of connection portions of the second p-type impurity region and the third electrode has a uniform resistance value.

20. The semiconductor device according to claim 15,

wherein a resistance value of the first resistance region is higher than resistance values of the first n-type impurity region and the first p-type impurity region, and

wherein a resistance value of the second resistance region is higher than resistance values of the second n-type impurity region and the second p-type impurity region.