Power Semiconductor Module

• US 20090321924A1
• Filed: 06/29/2009
• Published: 12/31/2009
• Est. Priority Date: 06/30/2008
• Status: Abandoned Application

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Ishikawa, Katsumi, Funakoshi, Sunao
• Application Number:
  US12/493,629
• Publication Number:
  US 20090321924A1
• Time in Patent Office: Days
• US Class Current: 257/722
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/367 Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/4336 in combination with jet impingement
• CPC Class Codes: H01L 23/4735 Jet impingement H01L23/4336 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/19107 off-chip wires

Abstract

A power semiconductor module includes: a power semiconductor device; a first heat dissipation plate; a second heat dissipation plate; a first channel; a second channel; a first channel wall; a second channel wall; a first refrigerant outlet provided on the first channel wall in a position corresponding to the power semiconductor device; a second refrigerant outlet provided on the second channel wall in a position corresponding to the power semiconductor device; first pin fins provided on at least one of the first heat dissipation plate and the second heat dissipation plate so as to be arranged radially around at least one of the first refrigerant outlet and the second refrigerant outlet; and second pin fins arranged in a staggered manner or in a tessellated manner around the first pin fins that are arranged radially.

Claims

1. A power semiconductor module, comprising:

a power semiconductor device;

a first heat dissipation plate provided at one side of the power semiconductor device;

a second heat dissipation plate provided at another side of the power semiconductor device;

a first channel through which a refrigerant flows so as to meet the first heat dissipation plate;

a second channel through which a refrigerant flows so as to meet the second heat dissipation plate;

a first channel wall arranged substantially parallel to the first heat dissipation plate so as to divide the first channel;

a second channel wall arranged substantially parallel to the second heat dissipation plate so as to divide the second channel;

a first refrigerant outlet provided on the first channel wall in a position corresponding to the power semiconductor device;

a second refrigerant outlet provided on the second channel wall in a position corresponding to the power semiconductor device;

first pin fins provided on at least one of the first heat dissipation plate and the second heat dissipation plate so as to be arranged radially around at least one of the first refrigerant outlet and the second refrigerant outlet; and

second pin fins arranged in a staggered manner or in a tessellated manner around the first pin fins that are arranged radially.

2. A power semiconductor module according to claim 1, wherein:

the power semiconductor device comprises a plurality of power semiconductor chips with high heating value, and a power semiconductor chip with low heating value;

a plurality of the first refrigerant outlets are provided on the first channel wall in the position corresponding to the power semiconductor chips with high heating value;

a plurality of the second refrigerant outlets are provided on the second channel wall in the position corresponding to the power semiconductor chips with high heating value;

the first pin fins are provided on at least one of the first heat dissipation plate and the second heat dissipation plate so as to be arranged radially around at least either the first refrigerant outlets or the second refrigerant outlets; and

the second pin fins are arranged in a staggered manner around the first pin fins.

8. A power semiconductor module according to claim 2, wherein:

the plurality of refrigerant outlets are arranged concentrically.

9. A power semiconductor module according to claim 1, wherein:

a cross-sectional area of the first refrigerant outlet which is provided at a gate side of the power semiconductor device is smaller than a cross-sectional area of the second refrigerant outlet.

10. A power semiconductor module according to claim 1, wherein:

a maximum part of a diameter of each of the pin fins is equal to or less than 1 mm.

3. A power semiconductor module, comprising:

a power semiconductor device;

a first heat dissipation plate provided at one side of the power semiconductor device;

a second heat dissipation plate provided at another side of the power semiconductor device;

a first channel through which a refrigerant flows so as to meet the first heat dissipation plate;

a second channel through which a refrigerant flows so as to meet the second heat dissipation plate;

a first channel wall arranged substantially parallel to the first heat dissipation plate so as to divide the first channel;

a second channel wall arranged substantially parallel to the second heat dissipation plate so as to divide the second channel;

a first refrigerant outlet provided on the first channel wail in a position corresponding to the power semiconductor device;

a second refrigerant outlet provided on the second channel wall in a position corresponding to the power semiconductor device;

first holes provided on at least one of the first heat dissipation plate and the second heat dissipation plate so as to be arranged concentrically around at least one of the first refrigerant outlet and the second refrigerant outlet, with each hole formed in a cylindrical shape, in a conical shape or in a half-cone shape; and

second holes arranged in a staggered manner around the first holes that are arranged radially, with each hole formed in a cylindrical shape, in a conical shape or in a half-cone shape.

4. A power semiconductor module according to claim 3, wherein:

the power semiconductor device comprises a plurality of power semiconductor chips with high heating value, and a power semiconductor chip with low heating value;

a plurality of the first refrigerant outlets are provided on the first channel wall in the position corresponding to the power semiconductor chips with high heating value;

a plurality of the second refrigerant outlets are provided on the second channel wall in the position corresponding to the power semiconductor chips with high heating value;

the first holes are provided on at least one of the first heat dissipation plate and the second heat dissipation plate so as to be arranged concentrically around at least either the first refrigerant outlets or the second refrigerant outlets; and

the second holes are arranged in a staggered manner around the first holes.

11. A power semiconductor module according to claim 3, wherein:

a maximum part of a diameter of each of the holes is equal to or less than 1 mm.

5. A power semiconductor module, comprising:

a power semiconductor device;

a first heat dissipation plate provided at one side of the power semiconductor device;

a second heat dissipation plate provided at another side of the power semiconductor device;

a first channel through which a refrigerant flows so as to meet the first heat dissipation plate;

a second channel through which a refrigerant flows so as to meet the second heat dissipation plate;

a first channel wall arranged substantially parallel to the first heat dissipation plate so as to divide the first channel;

a second channel wall arranged substantially parallel to the second heat dissipation plate so as to divide the second channel;

a first refrigerant outlet provided on the first channel wall in a position corresponding to the power semiconductor device;

a second refrigerant outlet provided on the second channel wall in a position corresponding to the power semiconductor device;

first flat fins provided on at least one of the first heat dissipation plate and the second heat dissipation plate so as to be arranged radially around at least one of the first refrigerant outlet and the second refrigerant outlet; and

second flat fins arranged in parallel to one another around the first flat fins that are arranged radially.

7. A power semiconductor module according to claim 5, wherein:

the power semiconductor device comprises a plurality of power semiconductor chips with high heating value, and a power semiconductor chip with low heating value;

a plurality of the first refrigerant outlets are provided on the first channel wall in the position corresponding to the power semiconductor chips with high heating value;

a plurality of the second refrigerant outlets are provided on the second channel wall in the position corresponding to the power semiconductor chips with high heating value;

the first flat fins are provided on at least one of the first heat dissipation plate and the second heat dissipation plate so as to be arranged radially around at least either the first refrigerant outlets or the second refrigerant outlets; and

the second flat pins are arranged in parallel around the first flat fins.

6. A power semiconductor module, comprising:

a power semiconductor device;

a first heat dissipation plate provided at one side of the power semiconductor device;

a second heat dissipation plate provided at another side of the power semiconductor device;

a first channel through which a refrigerant flows so as to meet the first heat dissipation plate;

a second channel through which a refrigerant flows so as to meet the second heat dissipation plate;

a first channel wall arranged substantially parallel to the first heat dissipation plate so as to divide the first channel;

a second channel wall arranged substantially parallel to the second heat dissipation plate so as to divide the second channel;

a first refrigerant outlet provided on the first channel wall in a position corresponding to the power semiconductor device;

a second refrigerant outlet provided on the second channel wall in a position corresponding to the power semiconductor device;

first grooves formed on at least one of the first heat dissipation plate and the second heat dissipation plate so as to be arranged radially around at least one of the first refrigerant outlet and the second refrigerant outlet; and

second grooves arranged in parallel to one another around the first grooves that are arranged radially.