READOUT-INTERFACE CIRCUIT FOR A CAPACITIVE MICROELECTROMECHANICAL SENSOR, AND CORRESPONDING SENSOR

• US 20090322353A1
• Filed: 04/29/2008
• Published: 12/31/2009
• Est. Priority Date: 04/30/2007
• Status: Abandoned Application

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Gottardi, Massimo, Jawed, Syed Arsalan, Ungaretti, Tommaso, Baschirotto, Andrea
• Application Number:
  US12/111,803
• Publication Number:
  US 20090322353A1
• Time in Patent Office: Days
• US Class Current: 324/686
• CPC Class Codes: B06B 1/0292 Electrostatic transducers, e.g. electret-type
• CPC Class Codes: G01D 5/24 by varying capacitance
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: G01P 15/125 by capacitive pick-up

Abstract

In a capacitive sensor, a detection structure, of a microelectromechanical type, is provided with a fixed element and a mobile element, capacitively coupled to one another, generating a capacitive variation as a function of a quantity to be detected, and with a parasitic coupling element, capacitively coupled to at least one between the mobile element and the fixed element generating a first parasitic capacitance, intrinsic to the detection structure; a readout-interface circuit is connected to the detection structure and generates, on an output terminal thereof, an output signal as a function of the capacitive variation. The readout-interface circuit has a feedback path between the output terminal and the parasitic coupling element so as to drive the first intrinsic parasitic capacitance with the output signal.

Claims

1. A capacitive sensor comprising:

a microelectromechanical detection structure having;

a fixed element and a mobile element capacitively coupled to one another and designed to generate a capacitive variation which is a function of a quantity to be detected, and

a parasitic coupling element capacitively coupled to at least one of said mobile element and said fixed element, and structured to generate a first parasitic capacitance intrinsic to said detection structure; and

a readout-interface circuit that includes;

an output terminal,

an amplification stage electrically coupled to said detection structure and configured to generate, on the output terminal, an output signal according to said capacitive variation, and

a feedback path between said output terminal and said parasitic coupling element, configured so as to drive said first parasitic capacitance with said output signal.

2. The sensor according to claim 1, wherein said parasitic coupling element is a substrate of said detection structure, said fixed element being fixed with respect to said substrate and said mobile element being configured so as to move with respect to said fixed element according to said quantity to be detected;

said feedback path further comprising an electrical connection between said output terminal and said substrate.

3. The sensor according to claim 1 wherein said feedback path comprises a direct electrical connection between said output terminal and said parasitic coupling element.

4. The sensor according to claim 1 wherein said readout-interface circuit has a first input terminal connected to said detection structure, wherein the amplification stage is coupled between said first input terminal and said output terminal, said feedback path forming a positive feedback branch of said amplification stage.

5. The sensor according to claim 1, wherein said amplification stage has a substantially unitary gain.

6. The sensor according to claim 1 wherein said parasitic coupling element is capacitively coupled to said mobile element, generating said first parasitic capacitance, and also to said fixed element, generating a second parasitic capacitance, which is intrinsic to said detection structure;

said feedback path being configured so as to drive said first parasitic capacitance and second parasitic capacitance with said output signal.

7. The sensor according to claim 1 wherein said readout-interface circuit has a first input terminal and a second input terminal, and comprises a first resistive element and a second resistive element coupled respectively to said first input terminal and second input terminal;

said mobile element and said fixed element being coupled, respectively, to said first input terminal and second input terminal.

8. The sensor according to claim 7 wherein said first and second resistive elements have a high impedance.

9. The sensor according to claim 7 wherein said readout-interface circuit further comprises a biasing generator coupled to said second input terminal through said second resistive element.

10. The sensor according to claim 1, wherein the sensor is one of a group consisting of:

a microphone, a monoaxial accelerometer, a pressure sensor, and a force sensor.

11. The sensor according to claim 1, wherein the readout-interface circuit includes a biasing resistor coupled between the mobile element and a voltage reference, the biasing resistor having a resistance on the order of 1 GΩ

.

12. A readout method for a capacitive sensor provided with a microelectromechanical detection structure designed to generate a capacitive variation according to a quantity to be detected, and having at least one first parasitic capacitance intrinsic to said detection structure;

said method comprising;

generating an output signal as a function of said capacitive variation; and

feeding back said first parasitic capacitance with said output signal.

13. The method according to claim 12 wherein said capacitive sensor further has a second parasitic capacitance intrinsic to said detection structure, said first and second intrinsic parasitic capacitances being present between a substrate and, respectively, a mobile element and a fixed element of said detection structure;

said step of generating comprising biasing said substrate with said output signal so as to feed back said first and second intrinsic parasitic capacitances with said output signal.

14. The method according to claim 13 wherein said mobile element and said fixed element are connected, respectively, to a first terminal and to a second terminal of said detection structure;

said generating further comprising connecting said first and second terminals at a high-impedance.

15. A readout-interface circuit for a capacitive sensor that includes a microelectromechanical detection structure having a fixed element and a mobile element capacitively coupled to one another and designed to generate a capacitive variation which is a function of a quantity to be detected, and a parasitic coupling element capacitively coupled to at least one of said mobile element and said fixed element, the readout-interface circuit comprising:

a first input terminal for coupling to said mobile element;

an output terminal;

an amplification stage coupled between said first input terminal and said output terminal, the amplification stage being configured to generate, on the output terminal, an output signal according to said capacitive variation; and

a conductive path for creating a feedback path between said output terminal and said parasitic coupling element, the conductive path being configured so as to drive said first parasitic capacitance with said output signal, said feedback path being a positive feedback branch of said amplification stage.

16. The readout-interface circuit according to claim 15, wherein said amplification stage has a substantially unitary gain.

17. The readout-interface circuit according to claim 15, further comprising:

a second input terminal for coupling to the fixed element; and

a first resistive element and a second resistive element coupled respectively to said first input terminal and second input terminal.

18. The readout-interface circuit according to claim 17 wherein said first and second resistive elements have a high impedance.

19. The readout-interface circuit according to claim 17, further comprising a biasing generator coupled to said second input terminal through said second resistive element.

20. The readout-interface circuit according to claim 15, further comprising a biasing resistor coupled between the first input terminal and a voltage reference, the biasing resistor having a resistance on the order of 1 GΩ

.