MEMORY OPERATION TESTING
First Claim
1. A method for operating a memory wherein the memory includes an array of memory cells, the method comprising:
- providing a first operating voltage to a first portion of the memory, the first portion including a first set of memory cells of the array, wherein the memory includes a first plurality of sense amplifier circuits coupled to the first set of memory cells;
testing a second set of memory cells of the array of the memory to determine if the second set can operate at a lower operating voltage than the first operating voltage, wherein the memory includes a diagnostic sense circuit coupled to at least some of the second set of cells, the diagnostic sense circuit having a delayed sensing characteristic as compared to the first plurality of sense amplifier circuits;
wherein the testing is performed while the operating voltage is provided to the first portion of the memory and the first set of memory cells are operable to store data, the testing further includes using the diagnostic sense circuit to sense data from at least one cell of the second set of cells, wherein the testing includes reading a stored value of the at least one cell and determining if valid data is read.
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Accused Products
Abstract
Test circuitry for determining whether a memory can operate at a lower operating voltage. The test circuitry includes a sense circuit having a delayed sensing characteristic as compared to other sense amplifier circuits of the memory. With this circuitry the test circuitry can determine if the sense circuit can provide valid data under more severe sensing conditions. In one example, the sense circuit includes a delay circuit in the sense enable signal path. If sense circuit can provide data at more server operating conditions, then the memory operating voltage can be lowered.
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Citations
20 Claims
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1. A method for operating a memory wherein the memory includes an array of memory cells, the method comprising:
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providing a first operating voltage to a first portion of the memory, the first portion including a first set of memory cells of the array, wherein the memory includes a first plurality of sense amplifier circuits coupled to the first set of memory cells; testing a second set of memory cells of the array of the memory to determine if the second set can operate at a lower operating voltage than the first operating voltage, wherein the memory includes a diagnostic sense circuit coupled to at least some of the second set of cells, the diagnostic sense circuit having a delayed sensing characteristic as compared to the first plurality of sense amplifier circuits; wherein the testing is performed while the operating voltage is provided to the first portion of the memory and the first set of memory cells are operable to store data, the testing further includes using the diagnostic sense circuit to sense data from at least one cell of the second set of cells, wherein the testing includes reading a stored value of the at least one cell and determining if valid data is read. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A circuit, comprising:
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an array of memory cells; a first plurality of sense circuits coupled to a first set of memory cells of the array, each of the first plurality of sense circuits including a sense amplifier for reading a data value of a cell of the first set coupled to the sense circuit during a read operation, each of the first plurality of sense circuits including an output for providing an indication of a data value of a cell of the first set coupled to sense circuit during a read operation as determined by the sense amplifier of the sense circuit; a diagnostic sense circuit coupled to a second set of memory cells of the array, the diagnostic sense circuit including an output for providing an indication of a data value of a cell of the second set coupled to diagnostic sense circuit during a read operation, wherein the diagnostic sense circuit is characterized as having a delayed sensing characteristic with respect to the sense circuits of the first plurality of sense circuits in providing a data value of a cell during a read operation. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method, comprising:
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asserting a sense enable signal on a sense enable line; providing the asserted sense enable signal to a first plurality of sense amplifiers of a memory, each of the first plurality of sense amplifiers is coupled to a column of memory cells of a plurality of memory cells of an array; delaying the asserted sense enable signal so as to provide the asserted sense enable signal to a second sense amplifier after the providing the asserted sense enable signal to the first plurality of sense amplifiers; providing an output signal of the second sense amplifier to an input of a latch circuit, the output signal of the second sense amplifier provided in response to the asserted sense enable signal being provided to the second sense amplifier; latching at an output of the latch circuit a value of the input of the latch circuit at a clock edge; determining whether the input of the latch circuit received valid data from the output signal prior to the latching by comparing the output of the latch circuit to a second value.
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Specification