TIN PHOSPHATE BARRIER FILM, METHOD, AND APPARATUS

• US 20090324830A1
• Filed: 09/03/2009
• Published: 12/31/2009
• Est. Priority Date: 08/24/2006
• Status: Active Grant

• Current Assignee: Benjamin Zain Hanson, Bruce Gardiner Aitken, Chong Pyung An, Mark Alejandro Quesada
• Original Assignee: Benjamin Zain Hanson, Bruce Gardiner Aitken, Chong Pyung An, Mark Alejandro Quesada
• Inventors: Aitken, Bruce Gardiner, Quesada, Mark Alejandro, An, Chong Pyung, Hanson, Benjamin Zain
• Granted Patent: US 7,749,811 B2
• Time in Patent Office: Days
• US Class Current: 427/255.395
• CPC Class Codes: C23C 14/06 characterised by the coating material C23C14/0021 , C23C14/04 take precedence
• CPC Class Codes: H01L 31/048 Encapsulation of modules
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer.

Claims

1. A method of inhibiting oxygen and moisture penetration of a device, comprising the steps of:

heating a tin phosphate starting material substantially free of fluorine in an electrically resistive heating element comprising tungsten, the heating comprising delivering a first electrical power to the resistive heating element to react the tungsten of the heating element with the tin phosphate starting material, then delivering a second electrical power to the resistive heating element greater than the first electrical power to volatilize the reacted tin phosphate starting material;

depositing a tin phosphate low liquidus temperature inorganic material, resulting from volatilizing the reacted tin phosphate starting material, in a layer on at least a portion of the device

heat treating the layer in a substantially oxygen and moisture free environment to form a hermetic seal; and

wherein the deposited layer comprises from greater than 0 to about 10 wt. % tungsten.

2. The method of claim 1, wherein the tin phosphate starting material comprises tin meta-phosphate, tin ortho-hydrogen phosphate, tin ortho-dihydrogen phosphate, tin pyrophosphate, or a mixture thereof.

3. The method of claim 1, wherein the tin phosphate low liquidus temperature inorganic material further comprises a tin oxide.

4. The method of claim 1, wherein the tin phosphate low liquidus temperature inorganic material comprises from about 60 mole percent to about 80 mole percent SnO.

5. The method of claim 1, wherein the tin phosphate low liquidus temperature inorganic material is substantially free of fluorine.

6. The method of claim 1, wherein the tin phosphate low liquidus temperature inorganic material further comprises a niobium compound.

7. The method of claim 1, wherein the device comprises at least one of:

an organic-electronic device;

a thin-film sensor;

an optoelectronic device;

a photovoltaic device;

a food container;

or

a medicine container.

8. The device produced by the method of claim 1.

21. The method of claim 1, wherein the tin phosphate low liquidus temperature inorganic material layer is heat treated to a temperature within 50°

C. of the tin phosphate low liquidus temperature inorganic material glass transition temperature.

9-20. -20. (canceled)

22. A method of inhibiting oxygen and moisture penetration of a device, comprising the steps of:

heating a tin phosphate starting material in a tungsten boat to react the tungsten of the boat with the tin phosphate starting material;

evaporating the reacted tin phosphate starting material and at least a portion of the tungsten;

depositing the reacted tin phosphate starting material and the at least a portion of the tungsten on the device to form a layer of tin phosphate low liquidus temperature inorganic material on the device;

heat treating the tin phosphate low liquidus temperature inorganic material layer in a substantially oxygen and moisture free environment to form a hermetic seal; and

wherein the deposited layer comprises from greater than 0 to about 10 wt. % tungsten.

23. The method of claim 22, wherein the hermetic seal comprises a single layer of tin phosphate low liquidus temperature inorganic material

24. The method of claim 22, wherein the tin phosphate starting material comprises tin pyrophosphate.

25. The method of claim 22, wherein the tin phosphate starting material is substantially free of fluorine.

26. The method of claim 22, wherein the tin phosphate low liquidus temperature inorganic material comprises

27. The method of claim 22, wherein the tin phosphate low liquidus temperature inorganic material layer is heat treated to a temperature within 50°

C. of the tin phosphate low liquidus temperature inorganic material glass transition temperature.

28. The method of claim 22, wherein the tin phosphate starting material comprises tin meta-phosphate, tin ortho-hydrogen phosphate, tin ortho-dihydrogen phosphate or a combination thereof.

29. The method of claim 22, further comprising evaporating niobium oxide with the reacted tin phosphate starting material.

30. The method of claim 22, wherein the layer of tin phosphate low liquidus temperature inorganic material further comprises niobium.

31. The method of claim 22, wherein the layer of tin phosphate low liquidus temperature inorganic material comprises from about 60 mole percent to about 80 mole percent SnO.