METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION USING AN ATMOSPHERIC PRESSURE GLOW DISCHARGE PLASMA

• US 20090324971A1
• Filed: 06/07/2007
• Published: 12/31/2009
• Est. Priority Date: 06/16/2006
• Status: Abandoned Application

• Current Assignee: Fujifilm Manufacturing Europe BV (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Manufacturing Europe BV (Fujifilm Holdings Corporation)
• Inventors: Van De Sanden, Mauritius Cornelius Maria, De Vries, Hindrik Willem, Kessels, Wilhelmus Mathijs Marie, Creatore, Mariadriana
• Application Number:
  US12/304,614
• Publication Number:
  US 20090324971A1
• Time in Patent Office: Days
• US Class Current: 428/446
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45595 Atmospheric CVD gas inlets with no enclosed reaction chamber
• CPC Class Codes: C23C 16/515 using pulsed discharges

Abstract

Apparatus and method for atomic layer deposition on a surface of a substrate (6) in a treatment space. A gas supply device (15, 16) is present for providing various gas mixtures to the treatment space. The gas supply device (15, 16) is arranged to provide a gas mixture with a precursor material to the treatment space for allowing reactive surface sites to react with precursor material molecules to give a surface covered by a monolayer of precursor molecules attached via the reactive sites to the surface of the substrate. Subsequently, a gas mixture comprising a reactive agent capable to convert the attached precursor molecules to active precursor sites is provided. A plasma generator (10) is present for generating an atmospheric pressure plasma in the gas mixture comprising the reactive agent.

Claims

1-38. -38. (canceled)

39. A method for atomic layer deposition on a surface of a substrate, comprising:

(a) conditioning the surface for atomic layer deposition by providing reactive surface sites;

(b) contacting a precursor material to the surface for allowing the reactive surface sites to react with molecules of the precursor material to obtain a surface covered by a monolayer of precursor molecules attached via the reactive sites to the surface of the substrate; and

(c) exposing the surface covered with precursor molecules to an atmospheric pressure plasma generated in a gas mixture comprising a reactive agent capable to convert the attached precursor molecules to active precursor sites.

40. The method according to claim 39, in which the substrate is a flexible substrate comprising a polymeric material.

41. The method according to claim 40, in which the substrate has a thickness of up to 2 mm.

42. The method according to claim 39, in which the reactive agent is a reactive gas.

43. The method according to claim 42 in which the reactive gas is oxygen, an oxygen comprising agent, or a nitrogen comprising agent.

44. The method according to claim 39, in which the substrate comprises a synthetic material surface.

45. The method according to claim 39, in which the conditioning comprises providing the surface with reactive groups.

46. The method according to claim 39, in which the gas mixture further comprises an inert gas selected from the group consisting of noble gases, nitrogen, and mixtures thereof.

47. The method according to claim 39, in which steps (b) and (c) take place in a first treatment space.

48. The method according to claim 47, in which the precursor material is provided in a gas mixture with an inert gas in a pulsed manner, and the reactive agent is introduced in a gas mixture with an inert gas or inert gas mixture in a pulsed manner, the method further comprising removing excess material and reaction products using an inert gas or inert gas mixture after each pulsed provision of precursor material and pulsed introduction of the reactive agent.

49. The method according to claim 47, in which the precursor material is provided in a gas mixture with an inert gas or inert gas mixture in a pulsed manner, and the reactive agent is introduced in a gas mixture with an inert gas or inert gas mixture in a continuous manner, the method further comprising removing excess material and reaction products using an inert gas or inert gas mixture after the pulsed provision of precursor material, and during the application of the atmospheric pressure glow discharge plasma.

50. The method according to claim 47, in which the precursor material is provided in a continuous manner in a first layer near the surface of the substrate only, and the reactive agent is introduced in a gas mixture with an inert gas or inert gas mixture in a continuous manner in a second layer above the first layer.

51. The method according to claim 39, in which the substrate is in a fixed position.

52. The method according to claim 39, in which step (b) takes place in a first treatment space and step (c) takes place a second treatment space, wherein the first treatment space is different from the second treatment space.

53. The method according to claim 52, in which the substrate is continuously or intermittently moving.

54. The method according to claim 53, in which a continuous or pulsed flow of a mixture of precursor material and an inert gas or inert gas mixture is provided in the first treatment space, and a continuous or pulsed flow of a mixture of a reactive agent and an inert gas or inert gas mixture is provided in the second treatment space.

55. The method according to claim 39, in which the precursor material is provided in a concentration of between 10 and 5000 ppm.

56. The method according to claim 39, in which the gas mixture of the reactive agent and inert gas comprises between 1 and 50% reactive agent.

57. The method according to claim 39, in which the atmospheric pressure plasma is a pulsed atmospheric glow discharge plasma.

58. The method according to claim 57, in which the pulsed atmospheric glow discharge plasma is stabilized by stabilization means counteracting local instabilities in the plasma.

59. The method according to claim 52, in which the surface in the second treatment space is exposed to a sub atmospheric glow discharge plasma.

72. A substrate comprising a deposition layer, which deposition layer is deposited using the method of claim 39.

60. An apparatus for atomic layer deposition on a surface of a substrate in a treatment space, the apparatus comprising:

(a) a gas supply device for providing various gas mixtures to the treatment space, the gas supply device being arranged to provide

(i) a gas mixture comprising a precursor material to the treatment space for allowing reactive surface sites to react with precursor material molecules to give a surface covered by a monolayer of precursor molecules attached via the reactive sites to the surface of the substrate, and, subsequently,

(ii) a gas mixture comprising a reactive agent capable of converting the attached precursor molecules to active precursor sites, and

(b) a plasma generator for generating an atmospheric pressure plasma in the gas mixture comprising the reactive agent.

61. The apparatus according to claim 60, further comprising a first treatment space in which the substrate is positioned in operation.

62. The apparatus according to claim 60, further comprising:

(c) a first treatment space in which the substrate is subjected to the gas mixture comprising the precursor material,

(d) a second treatment space in which the substrate is subjected to the gas mixture comprising the reactive agent and the atmospheric pressure plasma, and

(e) a transport device for moving the substrate between the first and second treatment spaces.

63. The apparatus according to claim 62, in which a plurality of the first and second treatment spaces are placed sequentially in a circular or linear arrangement.

64. The apparatus according to claim 60, in which the substrate comprises a continuous moving web.

65. The apparatus according to claim 60, in which the substrate comprises an intermittently moving web.

66. The apparatus according to claim 60, in which the gas supply device is provided with a valve device, the gas supply device being arranged to control the valve device for providing the various gas mixtures continuously or in a pulsed manner and for removing excess material and reaction products using an inert gas or inert gas mixture.

67. The apparatus according to claim 66, in which the gas supply device comprises an injection channel having a injection valve positioned near the surface of the substrate, in which the gas supply device is arranged to control the valve device and the injection valve for providing the precursor material in a continuous manner in a first layer near the surface of the substrate only using the introduction channel, and for introducing the reactive agent in a gas mixture with an inert gas or inert gas mixture in a continuous manner in a second layer above the first layer.

68. The apparatus according to any one of claim 60, in which the plasma generator is arranged to generate an atmospheric pressure glow discharge plasma.

69. The apparatus according to claim 68, in which the plasma generator further comprises a stabilization means for stabilizing the pulsed atmospheric pressure glow discharge plasma to counteract local instabilities in the plasma.

70. The apparatus according to claim 60 in which the plasma generator is arranged to provide a sub atmospheric plasma.

71. The use of an apparatus according to claim 60 for depositing a layer of material on a substrate.