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BONDED SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

  • US 20090325343A1
  • Filed: 05/29/2009
  • Published: 12/31/2009
  • Est. Priority Date: 06/24/2003
  • Status: Active Grant
First Claim
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1. A method of forming a bonded semiconductor structure circuit, comprising:

  • providing a support substrate which carries a first semiconductor circuit;

    providing a first interconnect region carried by the support substrate, the first interconnect region including a conductive line connected to the first semiconductor circuit, wherein the conductive line includes a refractory metal;

    providing a first bonded semiconductor substrate which is bonded to the first interconnect region through a first bonding interface;

    forming a second semiconductor circuit which is carried by the first bonded semiconductor substrate;

    forming a dielectric layer which is adjacent to a first sidewall of the first bonded semiconductor substrate;

    forming a conductive line which extends through the dielectric layer; and

    providing a second interconnect region which is carried by the first bonded semiconductor substrate, wherein the second interconnect region is connected to the second semiconductor circuit;

    wherein the first and second semiconductor circuits are connected together through the first and second interconnect regions and the conductive line extending through the dielectric layer.

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