×

Treatment of Gate Dielectric for Making High Performance Metal Oxide and Metal Oxynitride Thin Film Transistors

  • US 20100001346A1
  • Filed: 06/29/2009
  • Published: 01/07/2010
  • Est. Priority Date: 07/02/2008
  • Status: Active Grant
First Claim
Patent Images

1. A thin film transistor fabrication method, comprising:

  • depositing a gate dielectric layer over a gate electrode and a substrate;

    exposing the gate dielectric layer to an oxygen containing plasma;

    depositing a semiconductor layer over the gate dielectric layer, the semiconductor layer comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, gallium, indium, cadmium, tin, and combinations thereof;

    depositing a conductive layer over the semiconductor layer; and

    etching the conductive layer to define source and drain electrodes and an active channel, the active channel exposing a portion of the semiconductor layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×