Through-substrate vias and method of fabricating same
First Claim
1. A process for fabricating a through-substrate via in a semiconductor substrate which may contain active circuitry, the substrate having a first surface and a second surface, comprising:
- forming a through-substrate via hole in a semiconductor substrate;
depositing an isolation material directly onto the substrate and onto the interior walls of said through-substrate via hole using atomic layer deposition (ALD) such that said isolation material is electrically insulating, continuous and substantially conformal; and
depositing conductive material into the via hole over said isolation material using ALD such that said conductive material is electrically continuous across the length of said via hole.
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Accused Products
Abstract
An through-substrate via fabrication method requires forming a through-substrate via hole in a semiconductor substrate, depositing an electrically insulating, continuous and substantially conformal isolation material onto the substrate and interior walls of the via using ALD, and depositing a conductive material into the via and over the isolation material using ALD such that it is electrically continuous across the length of the via hole. The isolation material may be prepared by activating it with a seed layer deposited by ALD. The via hole is preferably formed by dry etching first and second cavities having respective diameters into the substrate'"'"'s top and bottom surfaces, respectively, to form a single continuous aperture through the substrate. The present method may be practiced at temperatures of less than 200° C. The basic fabrication method may be extended to provide vias with multiple conductive layers, such as coaxial and triaxial vias.
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Citations
37 Claims
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1. A process for fabricating a through-substrate via in a semiconductor substrate which may contain active circuitry, the substrate having a first surface and a second surface, comprising:
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forming a through-substrate via hole in a semiconductor substrate; depositing an isolation material directly onto the substrate and onto the interior walls of said through-substrate via hole using atomic layer deposition (ALD) such that said isolation material is electrically insulating, continuous and substantially conformal; and depositing conductive material into the via hole over said isolation material using ALD such that said conductive material is electrically continuous across the length of said via hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A substrate having first and second surfaces, comprising:
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a substantially cylindrical cavity formed into the first surface to a first depth and having a first diameter; a substantially cylindrical cavity formed into the second surface to a second depth greater than said first depth and having a second diameter greater than or equal to said first diameter, said substantially cylindrical cavities forming a via hole through said substrate; an isolation material deposited on said substrate and onto the interior walls of said via hole using atomic layer deposition (ALD) such that said isolation material is electrically insulating, continuous and substantially conformal; and a conductive material deposited into the via hole over said isolation material using ALD such that said conductive material is electrically continuous across the length of said via hole, thereby forming a through-substrate via. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification