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Through-substrate vias and method of fabricating same

  • US 20100001378A1
  • Filed: 07/01/2008
  • Published: 01/07/2010
  • Est. Priority Date: 07/01/2008
  • Status: Abandoned Application
First Claim
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1. A process for fabricating a through-substrate via in a semiconductor substrate which may contain active circuitry, the substrate having a first surface and a second surface, comprising:

  • forming a through-substrate via hole in a semiconductor substrate;

    depositing an isolation material directly onto the substrate and onto the interior walls of said through-substrate via hole using atomic layer deposition (ALD) such that said isolation material is electrically insulating, continuous and substantially conformal; and

    depositing conductive material into the via hole over said isolation material using ALD such that said conductive material is electrically continuous across the length of said via hole.

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