IC Microfluidic Platform With Integrated Magnetic Resonance Probe

• US 20100001724A1
• Filed: 05/18/2007
• Published: 01/07/2010
• Est. Priority Date: 05/18/2006
• Status: Abandoned Application

• Current Assignee: University of Florida Research Foundation, Incorporated (State University System of Florida)
• Original Assignee: University of Florida Research Foundation, Incorporated (State University System of Florida)
• Inventors: Bashirullah, Rizwan
• Application Number:
  US12/300,872
• Publication Number:
  US 20100001724A1
• Time in Patent Office: Days
• US Class Current: 324/307
• CPC Class Codes: B03C 5/026 using open-gradient differential dielectric separation, i.e. using electrodes of special shapes for non-uniform field creation, e.g. Fluid Integrated Circuit [FIC]
• CPC Class Codes: G01N 27/4473 by electric means
• CPC Class Codes: G01R 33/302 Miniaturized sample handling arrangements for sampling small quantities, e.g. flow-through microfluidic NMR chips
• CPC Class Codes: G01R 33/307 specially adapted for moving the sample relative to the MR system, e.g. spinning mechanisms, flow cells or means for positioning the sample inside a spectrometer
• CPC Class Codes: G01R 33/465 applied to biological material, e.g. in vitro testing
• CPC Class Codes: G01R 33/4808 Multimodal MR, e.g. MR combined with positron emission tomography [PET], MR combined with ultrasound or MR combined with computed tomography [CT]
• CPC Class Codes: G01R 33/5604 Microscopy; Zooming

Abstract

An integrated hybrid microfluidic-IC platform for single cell manipulation and microscopy and method for making the platform. In particular, the integrated platform can incorporate a planar microcoil embedded in a silicon substrate that is subsequently used to fabricate a CMOS IC for the platform. The CMOS IC circuitry provides a two dimensional array of microsites that can incorporate an electrode (microelectrode), sensors, and control logic. A direct conversion receiver (DCR) can also be embedded within the CMOS circuitry to create an integrated IC platform. A microfluidic chamber can be formed on the integrated IC platform. The integrated hybrid platform can provide an increased sensitivity for mass limited samples and high resolution manipulation of biological cells. In addition, individual cell manipulation can be performed via dielectrophoresis (DEP).

Claims

1. An apparatus for manipulation and analysis of a cell, comprising:

an integrated circuit (IC) microfluidic platform, wherein the IC microfluidic platform comprises a microchannel for the flow of a fluidic medium having a suspended cell,

a plurality of microelectrodes;

an electrode;

a voltage source, wherein a voltage applied between one or more of the plurality of microelectrodes and the electrode by the voltage source creates an electric field in a region of interest within the microchannel capable of manipulation of the suspended cell; and

an RF probe integrated with the IC microfluidic platform, wherein the RF probe is positioned to image the region of interest within the microchannel.

2. The apparatus according to claim 1, wherein the plurality of microelectrodes comprises a two-dimensional array of microelectrodes.

3. The apparatus according to claim 1, wherein the electrode is a conductive lid.

4. The apparatus according to claim 3, wherein the conductive lid comprises indium tin oxide (ITO).

5. The apparatus according to claim 1, further comprising a direct conversion receiver (DCR) capable of receiving a weak magnetic resonance imaging (MRI) signal.

6. The apparatus according to claim 1, wherein the RF probe comprises a planar microcoil.

7. The apparatus according to claim 6, wherein the RF probe is formed using complementary metal oxide semiconductor (CMOS) technology.

8. The apparatus according to claim 1, wherein both the microfluidic platform and the RF probe are formed using CMOS technology.

9. The apparatus according to claim 1, wherein the RF probe comprises:

an RF microcoil electrically connected to a matching network with protection cross coupled diodes;

a low noise amplifier a matching network electrically connected to the RF microcoil;

a low noise amplifier electrically connected to the matching network; and

a direct conversion receiver driven by the low noise amplifier.

10. The apparatus according to claim 9, wherein the direct conversion receiver comprises:

a first mixer and a second mixer receiving input from the low noise amplifier, wherein the first mixer and the second mixer are identical mixers;

a local oscillator for driving the first mixer and the second mixer in quadrature phase, wherein the local oscillator is buffered to drive a 90 degree phase-shift network, and is followed by limiters to stabilize the amplitude and set the appropriate common-mode voltage for the first mixer and the second mixer;

a first low pass filter and a second low pass filter connected to the outputs of the first mixer and the second mixer, respectively;

a first amplifier and a second amplifier connected to the outputs of the first low pass filter and the second low pass filter, respectively; and

a first line driver and a second line driver connected to the outputs of the first amplifier and the second amplifier, respectively.

11. The apparatus according to claim 1, further comprising a CMOS passivation layer formed on the plurality of microelectrodes to protect the microelectrodes from liquid.

12. The apparatus according to claim 1, wherein the RF probe comprises an RF microcoil, wherein the RF microcoil is positioned under the plurality of microelectrodes with an insulating layer formed therebetween.

13. The apparatus according to claim 8, wherein the plurality of microelectrodes are fabricated on a topmost metal layer.

14. The apparatus according to claim 1, wherein the RF probe comprises an RF microcoil, wherein the RF microcoil is positioned above the plurality of microelectrodes with an insulating layer formed therebetween.

15. The apparatus according to claim 1, wherein the RF probe comprises an RF microcoil, wherein the RF microcoil is positioned to a side of the plurality of microelectrodes.

16. The apparatus according to claim 1, wherein the RF probe comprises an RF microcoil, wherein the RF microcoil is positioned above the electrode with an insulating layer formed therebetween.

17. The apparatus according to claim 1, wherein the RF probe comprises an RF microcoil, wherein the RF microcoil is positioned below the electrode with an insulating layer formed therebetween.

18. The apparatus according to claim 1, further comprising control logic to control the voltage source, wherein the control logic is capable of providing the ability to control the location and/or orientation of a cell by application of electric fields via the microelectrodes and electrode contemporaneously with imaging the cell via the RF probe.

19. The apparatus according to claim 1, wherein the RF probe comprises a RF planar microcoil, wherein the RF microcoil is positioned so the plane of the RF planar microcoil is a distance away from a center of the region of interest approximately equal to the radius of the RF planar microcoil, where the radius of the probe is the mean of the radius of an outer loop of the planar microcoil and the radius of an inner loop of the planar microcoil.

20. The apparatus according to claim 7, wherein the RF probe comprises a RF microcoil having a magnetic susceptibility near zero.

21. The apparatus according to claim 20, wherein the RF microcoil comprises Cu and Al.

22. A method for manufacturing an apparatus for manipulation and analysis of a cell, comprising:

forming a planar microcoil on a substrate;

fabricating a CMOS integrated circuit (IC) on the substrate;

attaching the substrate having the planar microcoil and CMOS IC to a Si wafer or PCB having electrical connections;

coating the substrate and the Si wafer or PCB with a photoresist;

patterning the photoresist to define channel sidewalls of a micro-chamber and to provide open areas for external connections;

forming holes on a conductive lid for fluidic tube fittings; and

sealing the conductive lid on the channel sidewalls.

23. The method according to claim 22, wherein the conductive lid is spaced 3-400 μ

m from a top surface of the substrate.