APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION
First Claim
1. A chamber for plasma-enhanced atomic layer deposition processes, comprising:
- a substrate support containing a substrate receiving surface and disposed within a chamber body;
a chamber lid assembly coupled with the chamber body and comprising;
an inlet manifold assembly comprising an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, the inlet manifold assembly further comprises injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel;
a showerhead assembly comprising a showerhead plate disposed below the inlet manifold assembly;
a water box disposed between the inlet manifold assembly and the showerhead assembly; and
a remote plasma system disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel; and
a processing region disposed between the substrate receiving surface and a lower surface of the showerhead plate.
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Accused Products
Abstract
Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
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Citations
25 Claims
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1. A chamber for plasma-enhanced atomic layer deposition processes, comprising:
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a substrate support containing a substrate receiving surface and disposed within a chamber body; a chamber lid assembly coupled with the chamber body and comprising; an inlet manifold assembly comprising an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, the inlet manifold assembly further comprises injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel; a showerhead assembly comprising a showerhead plate disposed below the inlet manifold assembly; a water box disposed between the inlet manifold assembly and the showerhead assembly; and a remote plasma system disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel; and a processing region disposed between the substrate receiving surface and a lower surface of the showerhead plate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for depositing a material on a substrate, comprising:
exposing a substrate sequentially to a titanium precursor gas and a nitrogen plasma to form a titanium nitride material on the substrate during an atomic layer deposition process within a deposition chamber, wherein the titanium precursor gas comprises tetrakis(dimethylamido)titanium, the nitrogen plasma is generated from a remote plasma system, and the atomic layer deposition process comprises; flowing the titanium precursor gas into an annular channel within an inlet manifold assembly, wherein the annular channel encompasses a centralized channel, the centralized channel extends through the inlet manifold assembly, and a chamber lid assembly comprising the inlet manifold assembly is coupled with a chamber body forming the deposition chamber; flowing the titanium precursor gas from the annular channel into the centralized channel via a plurality of injection holes which extend from the annular channel through a sidewall of the centralized channel, and to the centralized channel; flowing the titanium precursor gas through the centralized channel, through a showerhead assembly attached with the chamber lid assembly, and absorbing a layer of the tetrakis(dimethylamido)titanium on the substrate; generating the nitrogen plasma by igniting a process gas comprising nitrogen (N2) with the remote plasma system; flowing the nitrogen plasma through the centralized channel, through the showerhead assembly, and towards the substrate; and exposing the layer of the tetrakis(dimethylamido)titanium to the nitrogen plasma to form the titanium nitride material on the substrate. - View Dependent Claims (18, 19, 20, 21, 22)
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23. A showerhead assembly for a vapor deposition process, comprising:
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a showerhead plate comprising a top surface, a bottom surface, and a radius extending from the center to the outer edge of the showerhead plate; a first plurality of holes in fluid communication with the top surface and the bottom surface, positioned within a first zone extending from the center of the showerhead plate to about 25% of the radius of the showerhead plate, and each hole comprises a diameter of less than 0.1 inches; and a second plurality of holes in fluid communication with the top surface and the bottom surface, positioned within a second zone extending from about 25% of the radius of the showerhead plate to about the outer edge of the showerhead plate, and each hole comprises a diameter of greater than 0.1 inches. - View Dependent Claims (24, 25)
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Specification