Structure Including A Graphene Layer And Method For Forming The Same

• US 20100003462A1
• Filed: 10/16/2008
• Published: 01/07/2010
• Est. Priority Date: 07/02/2008
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Kamins, Theodore I., Williams, R. Stanley, Quitoriano, Nathaniel
• Granted Patent: US 8,043,687 B2
• Time in Patent Office: Days
• US Class Current: 428/166
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/02 Elements
• CPC Class Codes: H01L 21/02527 Carbon, e.g. diamond-like carbon
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02645 Seed materials
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: Y10T 428/24562 Interlaminar spaces
• CPC Class Codes: Y10T 428/24612 Composite web or sheet
• CPC Class Codes: Y10T 428/30 Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

A method for forming a graphene layer is disclosed herein. The method includes establishing an insulating layer on a substrate such that at least one seed region, which exposes a surface of the substrate, is formed. A seed material in the seed region is exposed to a carbon-containing precursor gas, thereby initiating nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of a surface of the insulating layer.

Claims

1. A method for forming a graphene layer, the method comprising:

establishing an insulating layer on a substrate such that at least one seed region is formed; and

exposing a seed material in the at least one seed region to a carbon-containing precursor gas, thereby initiating nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of a surface of the insulating layer.

2. The method as defined in claim 1, further comprising selectively establishing the seed material in the at least one seed region.

3. The method as defined in claim 2 wherein the seed material is selectively established to be planar with the surface of the insulating layer or to extend beyond the surface of the insulating layer.

4. The method as defined in claim 1 wherein the at least one seed region exposes a surface of the substrate and wherein the seed material is the exposed surface of the substrate.

5. The method as defined in claim 1 wherein establishing the insulating layer is accomplished by:

depositing the insulating layer on the surface of the substrate; and

patterning the insulating layer to form the at least one seed region.

6. The method as defined in claim 1 wherein establishing the insulating layer is accomplished by:

i) thermally growing the insulating layer on the surface of the substrate; and

patterning the insulating layer to form the at least one seed region;

or

ii) patterning the surface of the substrate with an oxidation resistant mask; and

thermally growing the insulating layer on the patterned substrate surface.

7. The method as defined in claim 1 wherein prior to exposing the seed material to the precursor gas, the method further comprises forming a growth limiting feature in or on the insulating layer, the growth limiting feature configured to limit the lateral growth of the graphene layer.

8. The method as defined in claim 7 wherein the growth limiting feature is formed directly adjacent to or a spaced distance from one of two opposed sides of the seed material.

9. The method as defined in claim 8 wherein the lateral growth of the graphene layer initiates at the seed material and extends laterally in a direction dictated by the growth limiting feature.

10. The method as defined in claim 7 wherein forming the growth limiting feature is accomplished by at least one of 1) etching a recess in the insulating layer such that a predetermined thickness of the insulating layer remains, 2) etching a recess in the insulating layer to expose a portion of the substrate surface and establishing a material to a predetermined thickness on the exposed portion, or 3) establishing an additional region of a same or different insulating material on the insulating layer.

11. The method as defined in claim 1 wherein establishing the insulating layer on the substrate such that the at least one seed region is formed is accomplished by:

establishing a layer of the seed material on a surface of the substrate;

depositing the insulating layer on the seed material layer; and

patterning the insulating layer to expose the seed material and form the at least one seed region.

12. A structure, comprising:

a substrate;

an insulating layer established on the substrate, the insulating layer including at least one seed region formed therein;

a seed material located at the at least one seed region; and

a graphene layer extending from the seed material laterally along at least a portion of a surface of the insulating layer.

13. The structure as defined in claim 12 wherein the insulating layer is selected from a material that insulates the graphene layer from the substrate and that has a surface that is substantially resistant to graphene nucleation.

14. The structure as defined in claim 12 wherein the seed material is a material that allows graphene nucleation.

15. The structure as defined in claim 12 wherein the seed material is i) an exposed surface of the substrate at the seed region, ii) an exposed surface of a seed material layer at the seed region, or iii) a material established in the seed region.

16. The structure as defined in claim 12 wherein a surface of the seed material is substantially planar with the surface of the insulating layer or extends beyond the surface of the insulating layer.

17. The structure as defined in claim 12 wherein the at least one seed region has two opposed sides, and wherein the structure further comprises a growth limiting feature formed in or on the insulating layer directly adjacent to or a spaced distance from one of the two opposed sides of the at least one seed region.

18. The structure as defined in claim 17 wherein the growth limiting feature includes a recess in the insulating layer, and wherein the recess renders the graphene layer non-contiguous.

19. The structure as defined in claim 18 wherein the recess extends through a portion of a thickness of the insulating layer.