EPITAXIAL SEMICONDUCTOR DEPOSITION METHODS AND STRUCTURES

• US 20100006024A1
• Filed: 09/09/2009
• Published: 01/14/2010
• Est. Priority Date: 03/13/2003
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: Bauer, Matthias, Tomasini, Pierre, Arena, Chantal J., Brabant, Paul D., Raaijmakers, Ivo, Italiano, Joseph P.
• Granted Patent: US 8,530,340 B2
• Time in Patent Office: Days
• US Class Current: 117/104
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/08 Germanium
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

Claims

1. A method for forming a protective cap layer, the method comprising:

providing a strained epitaxial film; and

providing a flow of a silicon precursor to the strained film to deposit a protective cap layer on the strained epitaxial film at a deposition temperature between about 325°

C. and about 475°

C.

2. The method of claim 1, wherein depositing the protective cap layer takes place at a deposition rate of between about 5 Å

/min and about 50 Å

/min.

3. The method of claim 1, wherein the strained epitaxial film has a germanium content of about 99 atomic percent or higher.

4. The method of claim 1, wherein the silicon precursor comprises trisilane.

5. The method of claim 4, wherein providing a flow of the silicon precursor comprises flowing trisilane at a flow rate between about 5 mg/min to 50 mg/min.

6. The method of claim 1, wherein providing a flow of the silicon precursor comprises maintaining a deposition pressure between about 1 Torr and 100 Torr.

7. A method of preventing agglomeration of a strained layer deposited on a relaxed buffer layer, the method comprising:

providing a structure having the strained layer deposited on the relaxed buffer layer;

providing a flow of a silicon precursor to the strained layer to deposit an epitaxial layer at a temperature between about 325°

C. and about 475°

C. to serve as a cap layer that prevents agglomeration of the strained layer.

8. The method of claim 7, wherein depositing the epitaxial layer takes place at a deposition rate of between about 5 Å

/min and about 50 Å

/min.

9. The method of claim 7, wherein the strained layer contains less than 1% silicon.

10. The method of claim 7, wherein the relaxed buffer layer comprises SiGe.

11. The method of claim 7, wherein the strained layer comprises a Ge layer.

12. The method of claim 7, wherein the silicon precursor comprises trisilane.

13. The method of claim 7, wherein providing a flow of the silicon precursor occurs at a deposition pressure between about 1 Torr and 100 Torr.

14. The method of claim 7, further comprising increasing temperature to increase deposition speed after a sufficiently thick epitaxial layer is deposited at the deposition temperature between about 325°

C. and about 475°

C.

15. The method of claim 14, wherein increasing temperature comprises reaching an elevated temperature between about 400°

C. and about 525°

C.