PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM
First Claim
1. A plasma processing apparatus having a processing chamber and a mounting table provided within the processing chamber for processing a substrate mounted on the mounting table by plasma due to a processing gas, the apparatus comprising:
- first and second electrodes provided in an upper portion of the processing chamber so as to face the mounting table;
a gas supply unit for supplying the processing gas into between the first and second electrodes;
a radio frequency (RF) power supply unit connected to at least one of the first and second electrodes for applying a RF power between the first and second electrodes so that the processing gas supplied into between the first and second electrodes is converted to the plasma; and
a gas exhaust unit coupled to a lower portion of the processing chamber for exhausting the inside of the processing chamber to a vacuum level.
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Accused Products
Abstract
A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.
117 Citations
17 Claims
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1. A plasma processing apparatus having a processing chamber and a mounting table provided within the processing chamber for processing a substrate mounted on the mounting table by plasma due to a processing gas, the apparatus comprising:
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first and second electrodes provided in an upper portion of the processing chamber so as to face the mounting table; a gas supply unit for supplying the processing gas into between the first and second electrodes; a radio frequency (RF) power supply unit connected to at least one of the first and second electrodes for applying a RF power between the first and second electrodes so that the processing gas supplied into between the first and second electrodes is converted to the plasma; and a gas exhaust unit coupled to a lower portion of the processing chamber for exhausting the inside of the processing chamber to a vacuum level. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A plasma processing method for processing a substrate by plasma due to a processing gas, the method comprising:
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mounting the substrate onto a mounting table provided within a processing chamber; supplying the processing gas into between first and second electrodes provided in an upper portion of the processing chamber so as to face the mounting table; applying a RF power between the first and second electrodes so that the processing gas supplied into between the first and second electrodes is converted to the plasma; and exhausting the inside of the processing chamber from a lower portion of the processing chamber to a vacuum level. - View Dependent Claims (16)
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17. A storage medium storing a computer-readable program for performing a plasma processing method for processing a substrate by plasma due to a processing gas, the method comprising:
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mounting the substrate onto a mounting table provided within a processing chamber; supplying the processing gas into between first and second electrodes provided in an upper portion of the processing chamber so as to face the mounting table; applying a RF power between the first and second electrodes so that the processing gas supplied into between the first and second electrodes is converted to the plasma; and exhausting the inside of the processing chamber from a lower portion of the processing chamber to a vacuum level.
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Specification