Channel layers and semiconductor devices including the same
First Claim
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1. A semiconductor device, comprising:
- a multi-layer channel including at least a first layer and a second layer which have different carrier mobilities and formed of different oxide materials;
a source on the multi-layer channel layer;
a drain on the multi-layer channel layer, separated from the source; and
a gate on the multi-layer channel layer.
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Abstract
Channel layers and semiconductor devices including the channel layers are disclosed. A channel layer may include a multi-layered structure. Layers forming the channel layer may have different carrier mobilities and/or carrier densities. The channel layer may have a double layered structure including a first layer and a second layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the channel layers and/or thicknesses thereof.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a multi-layer channel including at least a first layer and a second layer which have different carrier mobilities and formed of different oxide materials; a source on the multi-layer channel layer; a drain on the multi-layer channel layer, separated from the source; and a gate on the multi-layer channel layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a multi-layer channel including at least a lower layer and an upper layer which have different carrier densities and formed of different oxide materials; a source on the multi-layer channel layer; a drain on the multi-layer channel layer, separated from the source; and a gate on the multi-layer channel layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification