SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20100006923A1
• Filed: 07/07/2009
• Published: 01/14/2010
• Est. Priority Date: 07/08/2008
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: SEKINE, Katsuyuki, FUJITSUKA, Ryota, NISHIDA, Daisuke, OZAWA, Yoshio
• Application Number:
  US12/498,916
• Publication Number:
  US 20100006923A1
• Time in Patent Office: Days
• US Class Current: 257/324
• CPC Class Codes: H01L 29/40117 the electrodes comprising a charge-trapping insulator
• CPC Class Codes: H01L 29/4234 Gate electrodes for transistors with charge trapping gate insulator
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/66833 with a charge trapping gate insulator, e.g. MNOS transistors
• CPC Class Codes: H01L 29/792 with charge trapping gate insulator, e.g. MNOS-memory transistors

Abstract

A semiconductor device includes a tunnel insulating film formed on a surface of a semiconductor region, a charge storage insulating film formed on a surface of the tunnel insulating film, a block insulating film formed on a surface of the charge storage insulating film, and a control gate electrode formed on a surface of the block insulating film, wherein the block insulating film includes a first insulating film containing a metal element and oxygen as main components, a second insulating film containing silicon and oxygen as main components, and an interface layer formed between the first insulating film and the second insulating film and containing the metal element, silicon, and oxygen as main components.

Claims

1. A semiconductor device comprising:

a tunnel insulating film formed on a surface of a semiconductor region;

a charge storage insulating film formed on a surface of the tunnel insulating film;

a block insulating film formed on a surface of the charge storage insulating film; and

a control gate electrode formed on a surface of the block insulating film,

wherein the block insulating film includes a first insulating film containing a metal element and oxygen as main components, a second insulating film containing silicon and oxygen as main components, and an interface layer formed between the first insulating film and the second insulating film and containing the metal element, silicon, and oxygen as main components.

2. The semiconductor device according to claim 1, wherein the first insulating film has a higher dielectric constant than the second insulating film.

3. The semiconductor device according to claim 1, wherein the first insulating film has a higher trap state density than the second insulating film, and

the interface layer has a higher trap state density than the first insulating film.

4. The semiconductor device according to claim 1, wherein the block insulating film further includes a third insulating film containing the metal element and oxygen as main components, and another interface layer formed between the second insulating film and the third insulating film and containing the metal element, silicon, and oxygen as main components, and

the second insulating film is formed between the first insulating film and the third insulating film.

5. A semiconductor device comprising:

a tunnel insulating film formed on a surface of a semiconductor region;

a charge storage insulating film formed on a surface of the tunnel insulating film;

a block insulating film formed on a surface of the charge storage insulating film; and

a control gate electrode formed on a surface of the block insulating film,

wherein the block insulating film includes a first insulating film containing a metal element and oxygen as main components, a second insulating film containing silicon and oxygen as main components, and an interface layer formed between the first insulating film and the second insulating film and containing nitrogen, and

the interface layer has a higher nitrogen concentration than each of the first insulating film and the second insulating film.

6. The semiconductor device according to claim 5, wherein the first insulating film has a higher dielectric constant than the second insulating film.

7. The semiconductor device according to claim 5, wherein the first insulating film has a higher trap state density than the second insulating film, and

the interface layer has a higher trap state density than the first insulating film.

8. The semiconductor device according to claim 5, wherein the block insulating film further includes a third insulating film containing the metal element and oxygen as main components, and another interface layer formed between the second insulating film and the third insulating film and containing nitrogen,

the second insulating film is formed between the first insulating film and the third insulating film, and

the another interface layer has a higher nitrogen concentration than each of the second insulating film and the third insulating film.

9. A semiconductor device comprising:

a tunnel insulating film formed on a surface of a semiconductor region;

a charge storage insulating film formed on a surface of the tunnel insulating film;

a block insulating film formed on a surface of the charge storage insulating film; and

a control gate electrode formed on a surface of the block insulating film,

wherein the block insulating film includes a first insulating film containing a metal element and oxygen as main components, a second insulating film containing silicon and oxygen as main components, and an interface layer formed between the first insulating film and the second insulating film and containing a predetermined element selected from inert gas elements and halogen elements, and

the predetermined element in the interface layer has a higher concentration than that in each of the first insulating film and the second insulating film.

10. The semiconductor device according to claim 9, wherein the first insulating film has a higher dielectric constant than the second insulating film.

11. The semiconductor device according to claim 9, wherein the first insulating film has a higher trap state density than the second insulating film, and

the interface layer has a higher trap state density than the first insulating film.

12. The semiconductor device according to claim 9, wherein the block insulating film further includes a third insulating film containing the metal element and oxygen as main components, and another interface layer formed between the second insulating film and the third insulating film and containing the predetermined element,

the second insulating film is formed between the first insulating film and the third insulating film, and

the predetermined element in the another interface layer has a higher concentration than that in each of the second insulating film and the third insulating film.

13. A method for manufacturing a semiconductor device comprising a tunnel insulating film formed on a surface of a semiconductor region, a charge storage insulating film formed on a surface of the tunnel insulating film, a block insulating film formed on a surface of the charge storage insulating film, and a control gate electrode formed on a surface of the block insulating film,

forming the block insulating film comprising:

forming a first insulating film containing a metal element and oxygen as main components;

forming a second insulating film containing silicon and oxygen as main components, on a surface of the first insulating film; and

carrying out thermal treatment on the first insulating film and the second insulating film in an oxidizing atmosphere.

14. The method according to claim 13, wherein when the second insulating film is formed, the first insulating film is reduced and oxygen vacancy is formed in the first insulating film, and

the thermal treatment in the oxidizing atmosphere compensates for the oxygen vacancy in the first insulating film.

15. The method according to claim 13, wherein the oxidizing atmosphere contains at least one of steam, oxygen gas, ozone gas, and an oxygen radical.

16. The method according to claim 13, further comprising forming a third insulating film containing the metal element and oxygen as main components, on a surface of the second insulating film thermally treated in the oxidizing atmosphere.

17. A method for manufacturing a semiconductor device comprising a tunnel insulating film formed on a surface of a semiconductor region, a charge storage insulating film formed on a surface of the tunnel insulating film, a block insulating film formed on a surface of the charge storage insulating film, and a control gate electrode formed on a surface of the block insulating film,

forming the block insulating film comprising:

forming a first insulating film containing a metal element and oxygen as main components, in a first depositing atmosphere;

forming a second insulating film containing silicon and oxygen as main components, on a surface of the first insulating film; and

forming a third insulating film containing a metal element and oxygen as main components, on a surface of the second insulating film in a second depositing atmosphere exerting higher oxidizing power than the first depositing atmosphere.

18. The method according to claim 17, wherein the first deposition atmosphere contains a first oxidizing agent, and

the second deposition atmosphere contains a second oxidizing agent exerting higher oxidizing power than the first oxidizing agent.

19. The method according to claim 17, wherein the second deposition atmosphere has a higher temperature than the first deposition atmosphere.