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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20100006923A1
  • Filed: 07/07/2009
  • Published: 01/14/2010
  • Est. Priority Date: 07/08/2008
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a tunnel insulating film formed on a surface of a semiconductor region;

    a charge storage insulating film formed on a surface of the tunnel insulating film;

    a block insulating film formed on a surface of the charge storage insulating film; and

    a control gate electrode formed on a surface of the block insulating film,wherein the block insulating film includes a first insulating film containing a metal element and oxygen as main components, a second insulating film containing silicon and oxygen as main components, and an interface layer formed between the first insulating film and the second insulating film and containing the metal element, silicon, and oxygen as main components.

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