BACKSIDE ILLUMINATED IMAGE SENSOR HAVING BIASED CONDUCTIVE LAYER FOR INCREASED QUANTUM EFFICIENCY

• US 20100006964A1
• Filed: 07/10/2008
• Published: 01/14/2010
• Est. Priority Date: 07/10/2008
• Status: Abandoned Application

• Current Assignee: Eastman Kodak Company
• Original Assignee: Eastman Kodak Company
• Inventors: Chen, Shenlin, Guidash, Robert M.
• Application Number:
  US12/170,502
• Publication Number:
  US 20100006964A1
• Time in Patent Office: Days
• US Class Current: 257/432
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers

Abstract

A backside illuminated image sensor includes a sensor layer comprising a plurality of photosensitive elements of the pixel array, a circuit layer comprising circuitry associated with the pixel array, a conductive layer formed on a backside surface of the sensor layer, and one or more conductive contacts configured to couple the conductive layer to a bias source in the circuit layer. The biased conductive layer produces an electric field across the photosensitive elements of the pixel array that facilitates charge carrier collection and reduces crosstalk between adjacent photosensitive elements, thereby providing improved quantum efficiency in the image sensor. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Claims

1. A method of forming an image sensor having a pixel array configured for backside illumination, the image sensor including a sensor layer comprising a plurality of photosensitive elements of the pixel array, and a circuit layer comprising circuitry associated with the pixel array, the method comprising the steps of:

forming a conductive layer on a backside surface of the sensor layer; and

coupling the conductive layer through one or more conductive contacts to a bias source in the circuit layer.

2. The method of claim 1 wherein the step of forming a conductive layer comprises forming the conductive layer as a transparent conductive film.

3. The method of claim 2 wherein the step of forming a conductive layer as a transparent conductive film further comprises patterning the transparent conductive film such that the film comprises an array of interconnected conductive elements overlying respective ones of the photosensitive elements of the pixel array.

4. The method of claim 3 wherein the conductive elements have a quadrilateral shape in a plan view and are arranged in rows and columns, with the conductive elements of a given one of the rows being interconnected with one another and with a column conductor that is common to all of the rows.

5. The method of claim 2 wherein the step of forming a conductive layer as a transparent conductive film further comprises forming the transparent conductive film from a material comprising a combination of indium, tin and oxide.

6. The method of claim 1 wherein the step of forming a conductive layer further comprises forming the conductive layer as a first semiconductor layer of a first conductivity type.

7. The method of claim 6 wherein a second semiconductor layer of the first conductivity type is formed on a frontside surface of the sensor layer and wherein the sensor layer further comprises an implant layer of a second conductivity type arranged between the first and second semiconductor layers of the first conductivity type.

8. The method of claim 1 wherein the bias source comprises a bias voltage source and wherein application of a bias voltage from the bias voltage source to the conductive layer produces an electric field across the plurality of photosensitive elements that facilitates charge carrier collection and thereby provides improved quantum efficiency.

9. The method of claim 1 wherein the sensor layer is formed from a silicon-on-insulator (SOI) wafer.

10. The method of claim 9 wherein the circuit layer is formed in a separate wafer that is bonded to the SOI wafer used to form the sensor layer.

11. An image sensor having a pixel array configured for backside illumination, comprising:

a sensor layer comprising a plurality of photosensitive elements of the pixel array;

a circuit layer comprising circuitry associated with the pixel array;

a conductive layer formed on a backside surface of the sensor layer; and

one or more conductive contacts configured to couple the conductive layer to a bias source in the circuit layer.

12. The image sensor of claim 11 wherein the conductive layer comprises a transparent conductive film.

13. The image sensor of claim 12 wherein the transparent conductive film is patterned to comprise an array of interconnected conductive elements overlying respective ones of the photosensitive elements of the pixel array.

14. The image sensor of claim 13 wherein the conductive elements each have a quadrilateral shape in a plan view and are arranged in rows and columns, with the conductive elements of a given one of the rows being interconnected with one another and with a column conductor that is common to all of the rows.

15. The image sensor of claim 12 wherein the transparent conductive film comprises a combination of indium, tin and oxide.

16. The image sensor of claim 11 wherein the conductive layer comprises a first semiconductor layer of a first conductivity type.

17. The image sensor of claim 16 further comprising a second semiconductor layer of the first conductivity type arranged on a frontside surface of the sensor layer wherein the sensor layer further comprises an implant layer of a second conductivity type arranged between the first and second semiconductor layers of the first conductivity type.

18. The image sensor of claim 11 wherein the bias source comprises a bias voltage source and wherein application of a bias voltage from the bias voltage source to the conductive layer produces an electric field across the plurality of photosensitive elements that facilitates charge carrier collection and thereby provides improved quantum efficiency.

19. A digital imaging device comprising:

an image sensor having a pixel array configured for backside illumination; and

one or more processing elements configured to process outputs of the image sensor to generate a digital image;

wherein said image sensor comprises;

a sensor layer comprising a plurality of photosensitive elements of the pixel array;

a circuit layer comprising circuitry associated with the pixel array;

a conductive layer formed on a backside surface of the sensor layer; and

one or more conductive contacts configured to couple the conductive layer to a bias source in the circuit layer.

20. The digital imaging device of claim 19 wherein said imaging device comprises a digital camera.