DEVICE INCLUDING AN IMIDE LAYER WITH NON-CONTACT OPENINGS AND METHOD

• US 20100007028A1
• Filed: 07/11/2008
• Published: 01/14/2010
• Est. Priority Date: 07/11/2008
• Status: Abandoned Application

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Fuchs, Michael, Gamerith, Stefan, Ungermanns, Christoph, Fachmann, Christian
• Application Number:
  US12/171,799
• Publication Number:
  US 20100007028A1
• Time in Patent Office: Days
• US Class Current: 257/774
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/3135 Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/3142 Sealing arrangements between parts, e.g. adhesion promotors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/24331 including nonapertured component

Abstract

A device including an imide layer with non-contact openings and the method for producing the device. One embodiment provides a substrate on a main surface of the substrate, an imide layer on the metallization layer, at least one contact opening through the imide layer and a plurality of non-contact openings in the imide layer. The non-contact openings are dimensioned to provide for an increased surface area of the imide layer or a surface area of the imide layer which is not reduced by more than 10 percent.

Claims

1. A device comprising:

a substrate;

a metallization layer on a main surface of the substrate;

an imide layer on the metallization layer;

at least one contact opening through the imide layer; and

a plurality of non-contact openings in the imide layer, the non-contact openings being dimensioned to provide for an increased surface area of the imide layer or a surface area of the imide layer which is not reduced by more than 10 percent.

2. The device of claim 1, comprising wherein the non-contact openings are distributed in all portions of the imide layer, arranged on the metallization layer.

3. The device of claim 1, wherein the metallization layer comprises at least two regions electrically insulated from each other by an insulation region, wherein the non-contact openings are not formed in a portion of the imide layer formed on the insulation region.

4. The device of claim 1, comprising wherein the non-contact openings extend through the imide layer to an inner region of the imide layer or to the metallization layer.

5. The device of claim 1, further comprising:

at least one adhesion layer between the metallization layer and the imide layer.

6. The device of claim 5, comprising wherein the non-contact openings extend through the adhesion layer to an inner region of the adhesion layer or extend to the metallization layer.

7. The device of claim 1, wherein the non-contact openings comprise a round, rectangular or hexagonal form.

8. The device of claim 1, comprising wherein the imide layer has a thickness in the range of 1 μ

m to 40 μ

m.

9. The device of claim 1, comprising wherein the metallic layer is structured to define source and gate electrodes of a power semiconductor device.

10. The device of claim 1, comprising:

a mold compound arranged on the imide layer and in the non-contact openings.

12. A device comprising:

a substrate;

a metallization layer on a main surface of the substrate;

an imide layer on the metallization layer;

at least one contact opening through the imide layer; and

a plurality of non-contact openings in the imide layer, the non-contact openings being dimensioned to provide for an increased surface area of the imide layer or a surface area of the imide layer which is not reduced by more than 10 percent,

wherein the non-contact openings form a regular or random raster of non-contact openings.

11. The device of claim 14, comprising wherein the non-contact openings are configured to permit mold compound flow.

13. The device of claim 12, wherein the raster comprises rows of non-contact openings, wherein adjacent rows of non-contact openings are offset with respect to each other.

14. The device of claim 12, comprising wherein the non-contact openings are arranged in a hexagonally or triangularly manner, so that each non-contact opening has the same distance to its neighboring non-contact openings.

15. The device of claim 12, comprising wherein lateral dimensions of the non-contact openings are in a range of 1 μ

m to 50 μ

m.

16. A device comprising:

a substrate;

a metallization layer on a main surface of the substrate;

an imide layer on the metallization layer, the imide layer having a thickness in a range of 1 μ

m to 40 μ

m;

at least one contact opening through the imide layer; and

a plurality of non-contact openings in the imide layer wherein the non-contact openings extend through the imide layer to the metallization layer and have lateral dimensions in the range of 1 μ

m to 50 μ

m.

17. The device as claimed in claim 16, further comprising:

an adhesion layer between the metallization layer and the imide layer; and

a mold compound arranged on the imide layer and in the non-contact openings.

18. A device comprising:

a substrate;

a metallization layer on a main surface of the substrate;

an imide layer on the metallization layer;

at least one contact opening through the imide layer wherein an electrical connection to the metallization extends through the contact opening; and

a plurality of non-contact openings in the imide layer not comprising an electrical connection extending therethrough.

19. The device of claim 18, comprising wherein the non-contact openings have lateral dimensions smaller than 50 μ

m.

20. A method for producing a device, comprising:

providing a substrate;

forming a metallization layer on the main surface of the substrate;

forming an imide layer on the metallization layer;

forming at least one contact opening through the imide layer; and

forming a plurality of non-contact openings in the imide layer, the non-contact openings being dimensioned to provide for an increased surface area of the imide layer or a surface area of the imide layer which is not reduced by more than 10 percent.

21. The method of claim 20, comprising performing the forming of at least one contact opening and the forming of the plurality of non-contact openings in the same process.

22. Method as claimed in claim 20, wherein the at least one contact opening and the plurality of non-contact openings are formed by a photolithographic process.

23. The method of claim 20, further comprising:

forming an adhesion layer between the metallization layer and the imide layer; and

extending the contact openings and the non-contact openings through the adhesion layer to an inner region of the adhesion layer or to the metallization layer.

24. The method of claim 20, further comprising:

forming a mold compound on the imide layer so as to permit the mold compound flow into the holes of the imide layer.

25. The method of claim 22, comprising forming at least one contact opening and the plurality of non-contact openings by an etching process using a same mask for forming the contact openings and the non-contact openings in the imide layer and in the adhesion layer.