PASSIVE CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING IN-SITU ARCING EVENTS IN A PLASMA PROCESSING CHAMBER
First Claim
1. An arrangement for detecting in-situ arcing events within a processing chamber of a plasma processing system during substrate processing, comprising:
- a probe arrangement, wherein said probe arrangement is disposed on a surface of said processing chamber and is configured to measure at least one plasma processing parameter, wherein said probe arrangement includesa plasma-facing sensor, anda measuring capacitor, wherein said plasma-facing sensor is coupled to a first plate of said measuring capacitor; and
a detection arrangement, said detection arrangement is coupled to a second plate of said measuring capacitor, wherein said detection arrangement is configured for converting an induced current flowing through said measuring capacitor into a set of digital signals, said set of digital signals being processed to detect said in-situ arcing events.
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Abstract
An arrangement for detecting in-situ arcing events within a processing chamber of a plasma processing system during substrate processing is provided. The arrangement includes a probe arrangement, which is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The probe arrangement also includes a detection arrangement that is coupled to a second plate of the measuring capacitor, wherein the detection arrangement is configured for converting an induced current flowing through the measuring capacitor into a set of digital signals, which is processed to detect the in-situ arcing events.
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Citations
20 Claims
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1. An arrangement for detecting in-situ arcing events within a processing chamber of a plasma processing system during substrate processing, comprising:
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a probe arrangement, wherein said probe arrangement is disposed on a surface of said processing chamber and is configured to measure at least one plasma processing parameter, wherein said probe arrangement includes a plasma-facing sensor, and a measuring capacitor, wherein said plasma-facing sensor is coupled to a first plate of said measuring capacitor; and a detection arrangement, said detection arrangement is coupled to a second plate of said measuring capacitor, wherein said detection arrangement is configured for converting an induced current flowing through said measuring capacitor into a set of digital signals, said set of digital signals being processed to detect said in-situ arcing events. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for detecting in-situ arcing events within a processing chamber of a plasma processing system during substrate processing, comprising:
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collecting a set of process data, said process data including induced current signals flowing through a measuring capacitor, converting said induced current signals into a set of analog voltage signals; converting said set of analog voltage signals into a set of digital signals; and analyzing said set of digital signals to detect high frequency perturbations, said high frequency perturbations indicating said in-situ arcing events. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification