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Memory Device And Method For Making Same

  • US 20100008122A1
  • Filed: 07/09/2008
  • Published: 01/14/2010
  • Est. Priority Date: 07/09/2008
  • Status: Active Grant
First Claim
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1. A memory cell, comprising:

  • a programmable resistance memory element; and

    a heterojunction bipolar transistor electrically coupled to said memory element.

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