SUBSTRATE STRUCTURE AND METHOD OF REMOVING THE SUBSTRATE STRUCTURE

• US 20100009476A1
• Filed: 07/10/2009
• Published: 01/14/2010
• Est. Priority Date: 07/14/2008
• Status: Abandoned Application

• Current Assignee: Advanced Optoelectronic Technology, Inc.
• Original Assignee: Advanced Optoelectronic Technology, Inc.
• Inventors: CHAN, Shih Hsiung, HUANG, Shih Cheng, TU, Po Min
• Application Number:
  US12/501,333
• Publication Number:
  US 20100009476A1
• Time in Patent Office: Days
• US Class Current: 438/29
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02653 Vapour-liquid-solid growth
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate

Abstract

A method of removing a substrate structure is described. A plurality of pillars is formed on a substrate by using a photolithography etching process. A group III nitride semiconductor layer is grown on the plurality of pillars. The plurality of pillars is etched to separate the group III nitride semiconductor layer from the substrate by using a chemical etching process.

Claims

1. A method for removing a substrate structure, comprising the steps of:

forming a plurality of pillars on a substrate by using a photolithography etching process;

forming a group III nitride semiconductor layer on the plurality of pillars; and

etching the plurality of pillars to separate the group III nitride semiconductor layer from the substrate by using a chemical etching process.

2. The method for removing a substrate structure according to claim 1, wherein a process for forming the group III nitride semiconductor layer is a hydride vapor phase epitaxy (HVPE) process, a metal organic chemical vapor phase deposition (MOCVD) process or a molecular beam epitaxy (MBE) process.

3. The method for removing a substrate structure according to claim 1, wherein the step of etching the plurality of pillars by using the chemical etching process uses etching solution.

4. The method for removing a substrate structure according to claim 3, wherein the etching solution is aqueous sulfuric acid, phosphoric acid, hydrochloric acid, or combination thereof.

5. The method for removing a substrate structure according to claim 1, wherein the group III nitride semiconductor layer is a gallium nitride layer, an aluminum nitride layer, an indium nitride layer or an aluminum gallium indium nitride layer.

6. The method for removing a substrate structure according to claim 1, wherein a material of the substrate is LiAlO₂ or LiGaO₂.

7. The method for removing a substrate structure according to claim 6, wherein the substrate is a patterned substrate.

8. The method for removing a substrate structure according to claim 1, wherein the group III nitride semiconductor layer includes an n-type layer, a quantum well layer and a p-type layer.

9. A method for removing a substrate structure, comprising the steps of:

forming a plurality of pillars on a substrate by using a photolithography etching process;

forming a group III nitride semiconductor device layer on the plurality of pillars;

forming a metallic mirror layer on the group III nitride semiconductor device layer;

forming a conductive layer on the metallic mirror layer; and

etching the plurality of pillars to separate the group III nitride semiconductor device layer from the substrate by using a chemical etching process, and then obtaining a vertical light emitting device.

10. The method for removing a substrate structure according to claim 9, wherein the vertical light emitting device includes the group III nitride semiconductor device layer, the metallic mirror layer and the conductive layer.

11. The method for removing a substrate structure according to claim 9, wherein a process for forming the group III nitride semiconductor device layer is a hydride vapor phase epitaxy (HVPE) process, a metal organic chemical vapor phase deposition (MOCVD) process or a molecular beam epitaxy (MBE) process.

12. The method for removing a substrate structure according to claim 9, wherein the step of etching the plurality of pillars by using the chemical etching process uses etching solution.

13. The method for removing a substrate structure according to claim 12, wherein the etching solution is aqueous sulfuric acid, phosphoric acid, hydrochloric acid, or combination thereof.

14. The method for removing a substrate structure according to claim 9, wherein the group III nitride semiconductor layer is a gallium nitride layer, an aluminum nitride layer, an indium nitride layer or an aluminum gallium indium nitride layer.

15. The method for removing a substrate structure according to claim 9, wherein a material of the substrate is LiAlO₂ or LiGaO₂.

16. The method for removing a substrate structure according to claim 15, wherein the substrate is a patterned substrate.

17. The method for removing a substrate structure according to claim 9, wherein the group III nitride semiconductor layer includes an n-type layer, a quantum well layer and a p-type layer.