SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20100009477A1
• Filed: 09/21/2009
• Published: 01/14/2010
• Est. Priority Date: 12/02/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: LEE, Jeong-wook
• Granted Patent: US 8,097,502 B2
• Time in Patent Office: Days
• US Class Current: 438/29
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

Provided is a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes a substrate, at least two light emitting cells located on the substrate and formed by stacking semiconductor material layers, a reflection layer and a transparent insulating layer sequentially stacked between the light emitting cells, and a transparent electrode covering the upper surface of the light emitting cells.

Claims

1. A method of manufacturing a light emitting device comprising:

forming a transparent insulating layer on a substrate;

forming at least one hole in the transparent insulating layer;

forming a light emitting cell in the hole by stacking semiconductor material layers; and

forming a transparent electrode covering the light emitting cells.

2. The method of claim 1, wherein the substrate is formed of silicon Si.

3. The method of claim 1, wherein the transparent insulating layer is thicker than the light emitting cell.

4. The method of claim 1, wherein the transparent insulating layer is formed of a material having a lower refractive index than the semiconductor material layer that constitutes the light emitting cell.

5. The method of claim 1, wherein the transparent insulating layer is formed of at least one of SiO₂, SiN_x, Al₂O₃, HfO, ZrO, TiO₂, and ZnO.

6. The method of claim 1, wherein the transparent electrode is formed of one of a metal and a transparent conductive material (TCO).

7. The method of claim 6, wherein the metal is one of Au, Pd, Pt, Ru, and Ni.

8. The method of claim 6, wherein the TCO is one of ZnO and indium oxide.

9. The method of claim 8, wherein the indium oxide further comprises at least one element selected from the group consisting of Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr, and one component of the La group.

10. The method of claim 1, wherein the forming of the transparent electrode covering the light emitting cells comprises:

forming a reflection layer covering the transparent insulating layer and the light emitting cells; and

forming a heat transfer layer on the reflection layer.

11. The method of claim 10, wherein the forming of the transparent electrode covering the light emitting cells further comprises removing the substrate.

12. The method of claim 11, wherein the forming of the transparent electrode covering the light emitting cells further comprises forming a transparent electrode covering the lower surfaces of the light emitting cells, where the substrate is removed.

13. The method of claim 10, wherein the heat transfer layer is formed of one of Cu, Si, and a Cu alloy.

14. The method of claim 1, wherein the forming of the transparent insulating layer on the substrate further comprises forming a reflection layer between the substrate and the transparent insulating layer, and the forming of at least one hole in the transparent insulating layer comprises forming holes in the transparent insulating layer and the reflection layer until the substrate is exposed.

15. The method of claim 14, wherein the forming of the light emitting cell in the holes by stacking semiconductor material layers further comprises forming a buffer layer between the substrate and the light emitting cells.

16. The method of claim 1, wherein the forming of the transparent insulating layer on a substrate further comprises sequentially forming a GaN layer and a reflection layer between the substrate and the transparent insulating layer, and the forming of at least one hole in the transparent insulating layer comprises forming holes in the transparent insulating layer and the reflection layer until the GaN layer is exposed.

17. The method of claim 16, wherein the forming of the transparent insulating layer on the substrate further comprises forming a buffer layer between the substrate and the GaN layer.

18. The method of claim 14, wherein the sum of the thicknesses of the transparent insulating layer and the reflection layer is greater than the thickness of the light emitting cells.

19. The method of claim 14, wherein the transparent insulating layer is thicker than the reflection layer.

20. The method of claim 14, wherein the ratio of the width to the thickness of the light emitting cell is greater than the tangent of the total internal reflection angle of the transparent insulating layer with respect to the light emitting cell.

21. The method of claim 14, wherein the reflection layer is formed of a metal layer.

22. The method of claim 14, wherein the reflection layer is formed of a plurality of dielectric layers.

23. The method of claim 14, wherein the reflection layer is formed of a plurality of stacked layers in which one or more pairs of a metal layer and a dielectric layer are repeatedly stacked.

24. The method of claim 15, wherein the buffer layer is a III-V group nitride semiconductor layer of the GaN group.