METHOD OF FABRICATING MICRO-VERTICAL STRUCTURE
First Claim
1. A method of fabricating a micro-vertical structure, comprising:
- forming an insulating layer on a first crystalline silicon substrate and patterning the insulating layer to form an insulating layer pattern and a first cavity for preventing occurrence of footings;
bonding a second crystalline silicon substrate onto the insulating layer pattern and etching the second crystalline silicon substrate using a deep reactive ion etch (DRIE) process, wherein the second crystalline silicon substrate is etched along a crystal plane vertical to the second crystalline silicon substrate; and
etching an etched vertical surface of the second crystalline silicon substrate using a crystalline wet etching process to form the micro-vertical structure having a vertical surface vertical to the second crystalline silicon substrate.
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Abstract
A method of fabricating a micro-vertical structure is provided. The method includes bonding a second crystalline silicon (Si) substrate onto a first crystalline Si substrate by interposing an insulating layer pattern and a cavity, etching the second crystalline Si substrate using a deep reactive ion etch (DRIE) process along a [111] crystal plane vertical to the second crystalline Si substrate, and etching an etched vertical surface of the second crystalline Si substrate using a crystalline wet etching process to improve the surface roughness and flatness of the etched vertical surface. As a result, no morphological defects occur on the etched vertical surface. Also, footings do not occur at an etch end-point due to the insulating layer pattern. In addition, the micro-vertical structure does not float in the air but is fixed to the first crystalline Si substrate, thereby facilitating subsequent processes.
36 Citations
9 Claims
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1. A method of fabricating a micro-vertical structure, comprising:
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forming an insulating layer on a first crystalline silicon substrate and patterning the insulating layer to form an insulating layer pattern and a first cavity for preventing occurrence of footings; bonding a second crystalline silicon substrate onto the insulating layer pattern and etching the second crystalline silicon substrate using a deep reactive ion etch (DRIE) process, wherein the second crystalline silicon substrate is etched along a crystal plane vertical to the second crystalline silicon substrate; and etching an etched vertical surface of the second crystalline silicon substrate using a crystalline wet etching process to form the micro-vertical structure having a vertical surface vertical to the second crystalline silicon substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification