ISOLATION FOR MULTI-SINGLE-WAFER PROCESSING APPARATUS

• US 20100012036A1
• Filed: 07/13/2009
• Published: 01/21/2010
• Est. Priority Date: 07/11/2008
• Status: Abandoned Application

• Current Assignee: Aixtron Inc. (Aixtron AG)
• Original Assignee: Aixtron Inc. (Aixtron AG)
• Inventors: Seidel, Thomas E., Silva, Hugo, Lindner, Johannes, Dauelsberg, Martin, Strauch, Gerhard K.
• Application Number:
  US12/502,142
• Publication Number:
  US 20100012036A1
• Time in Patent Office: Days
• US Class Current: 118/725
• CPC Class Codes: C23C 16/4409 characterised by sealing means
• CPC Class Codes: C23C 16/45544 characterized by the apparatus

Abstract

An MSW processing apparatus includes two or more semi-isolated reaction chambers separated from one another by isolation regions configured with two or more TIG elements, either or both of which may be independently purged. The TIG elements may be configured in a staircase-like fashion and include vertical and horizontal conductance spacings, sized so that, under different operational process temperatures of the MSW processing apparatus, a change in the horizontal conductance spacing is less than a change in the vertical conductance spacing.

Claims

1. A multi single wafer (MSW) processing apparatus comprising two or more semi-isolated reaction chambers and a separate indexer volume, the reaction chambers being separated from one another by isolation regions configured with two or more tongue-in groove (TIG) elements, at least one of which is configured in a staircase-like fashion, and in which each gas flow pathway through the TIG elements is independently purged via independent purge lines.

2. The MSW processing apparatus of claim 1, wherein the at least one TIG element configured in the staircase-like fashion includes vertical and horizontal conductance spacings sized so that a change in the horizontal conductance spacing is less than a change in the vertical conductance spacing under different operational process temperatures of the MSW processing apparatus.

3. The MSW processing apparatus of claim 1, wherein purges through the independent purge lines are independently time controlled.

4. The MSW processing apparatus of claim 1, wherein the at least one TIG element configured in the staircase-like fashion is operable to limit diffusion-backflow of a downstream gas to an outer chamber of the MSW apparatus.

5. The MSW processing apparatus of claim 1, further comprising a pump operable to remove a gas stream through one or more of the independent purge lines.

6. A multi single wafer (MSW) processing apparatus comprising two or more semi-isolated reaction chambers and a separate indexer volume,

the reaction chambers being separated from one another by isolation regions configured with two or more tongue-in groove (TIG) elements, at least one of which is configured in a staircase-like fashion, and in which each flow pathway through the TIG elements is independently purged via independent purge lines, wherein the two or more TIG elements include an inner TIG element and an outer TIG element;

the reaction chambers comprising a vertically movable heater-susceptor coupled to an annular flow ring configured as a gas conduit and having an outlet port extending below a bottom of a wafer transport slot valve of the reaction chamber apparatus when the heater-susceptor is in a processing position, wherein the inner TIG element includes the annular flow ring.

7. A multi single wafer (MSW) processing apparatus comprising two or more semi-isolated reaction chambers and a separate indexer volume,

the reaction chambers being separated from one another by isolation regions configured with two or more tongue-in groove (TIG) elements, at least one of which is configured in a staircase-like fashion, and in which each gas flow pathway through the TIG elements is independently purged via independent purge lines, wherein the two or more TIG elements include an inner TIG element and an outer TIG element;

the reaction chambers comprising a heater-susceptor coupled to an annular flow ring conduit at a perimeter of the heater-susceptor, the annular flow ring defined by inner and outer members and configured to isolate an outer chamber of at least one of the reaction chambers above a wafer position from a confined reaction chamber of the reaction chamber when the heater-susceptor is in a processing position, in which instance an outer member of the annular flow ring is in proximity with a second annular ring attached to a lid of the reaction chamber, the outer member of the annular flow ring and the second annular ring forming at least one of the TIG elements, wherein the inner TIG element includes the annular flow ring.

8. The MSW processing apparatus of claim 7, further comprising a pump operable to remove gas through one or more of the independent purge lines.

9. A multi single wafer (MSW) processing apparatus comprising two or more semi-isolated reaction chambers and a separate indexer volume,

the reaction chambers being separated from one another by isolation regions configured with two or more tongue-in groove (TIG) elements, at least one of which is configured in a staircase-like fashion, and in which each gas flow pathway through the TIG elements is independently purged via independent purge lines, wherein the two or more TIG elements include an inner TIG element and an outer TIG element;

the reaction chambers each comprising a vertically movable susceptor coupled to an annular flow ring conduit at a perimeter of the susceptor, the annular flow ring conduit configured to pass reaction gas effluent to a downstream pump, wherein the inner TIG element includes the annular flow ring.

10. The MSW processing apparatus of claim 9, wherein the annular flow ring includes a lower orifice, the MSW processing apparatus further comprising a downstream baffle located between the lower orifice of the annular flow ring and the downstream pump.

11. The MSW processing apparatus of claim 9, further comprising a second annular ring attached to a lid of the reaction chamber apparatus, the second annular ring being in proximity to an outer member of the annular flow ring conduit when the vertically movable susceptor is in a process position, the second annular ring and the outer member of the annular flow ring conduit forming one of the TIG configurations.

12. The MSW processing apparatus of claim 11, wherein the second annular ring is an inner lid ring, the MSW processing apparatus further comprises an outer lid ring surrounding the TIG configuration formed by the second annular ring and the outer member of the annular flow ring conduit when the vertically movable susceptor is in the process position.

13. The MSW processing apparatus of claim 11, wherein a joint between the second annular ring and the lid is curved.

14. The MSW processing apparatus of claim 11, wherein a joint between the second annular ring and the lid is filleted.