High Power Efficiency, Large Substrate, Polycrystalline CdTe Thin Film Semiconductor Photovoltaic Cell Structures Grown by Molecular Beam Epitaxy at High Deposition Rate for Use in Solar Electricity Generation
First Claim
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1. A photovoltaic device, comprising:
- a first layer comprising tellurium (Te) and cadmium (Cd) or zinc (Zn) over a substrate;
a second layer comprising Cd and Te over the first layer; and
a third layer comprising Cd, Zn and Te over the second layer.
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Abstract
Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.
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Citations
28 Claims
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1. A photovoltaic device, comprising:
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a first layer comprising tellurium (Te) and cadmium (Cd) or zinc (Zn) over a substrate; a second layer comprising Cd and Te over the first layer; and a third layer comprising Cd, Zn and Te over the second layer. - View Dependent Claims (2, 3, 4)
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5. A photovoltaic device, comprising:
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a p-type ZnTe layer over a substrate; a p-type CdTe layer over the p-type ZnTe layer; a first n-type CdZnTe layer over the p-type CdTe; and a second n-type CdZnTe layer over the first n-type CdZnTe layer. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12)
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13. A photovoltaic device, comprising
an n-type layer including Cd and Te; -
an intrinsic CdTe layer over the n-type layer; and a p-type layer including Te and one or more of Cd and Zn over the intrinsic CdTe layer. - View Dependent Claims (14, 15, 16)
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17. A photovoltaic device, comprising:
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a first n-type CdTe layer over a substrate; a second n-type CdTe layer over the first n-type CdTe layer; a first p-type CdZnTe layer over the second n-type CdTe layer; and a second p-type CdZnTe layer over the first p-type CdZnTe layer. - View Dependent Claims (18, 19, 20, 21, 22)
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- 23. A photovoltaic device, comprising an intrinsic CdTe layer between an n-type layer having Cd and Te and a p-type layer having Zn and Te, wherein the n-type layer is disposed below the intrinsic CdTe layer.
Specification