Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride with Hydride Vapor Phase Epitaxy (HVPE)

• US 20100012948A1
• Filed: 07/15/2009
• Published: 01/21/2010
• Est. Priority Date: 07/16/2008
• Status: Active Grant

• Current Assignee: Ostendo Technologies Inc.
• Original Assignee: Ostendo Technologies Inc.
• Inventors: Kovalenkov, Oleg, Ivantsov, Vladimir, Shapovalova, Lisa, El-Ghoroury, Hussein S., Usikov, Alexander, Spiberg, Philippe, Syrkin, Alexander, Brown, Robert G.W.
• Granted Patent: US 8,673,074 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/2003 Nitride compounds

Abstract

A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.

Claims

1. A method of growing a planar semi-polar III-Nitride epitaxial film, comprising:

growing semi-polar {11-22} or {10-13} plane III-Nitride on a suitable substrate using hydride vapor phase epitaxy (HVPE).

2. The method of claim 1, wherein the substrate comprises an m-Sapphire substrate.

3. The method of claim 1, wherein the semi-polar III-Nitride comprises semi-polar plane gallium nitride (GaN).

4. The method of claim 1, further comprising performing a pretreatment of the substrate prior to the growing step.

5. The method of claim 1, further comprising growing an intermediate layer on the substrate and growing the semi-polar plane III-Nitride on the intermediate layer.

6. The method of claim 5, wherein the intermediate layer comprises aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) layer.

7. The method of claim 1, further comprising:

pretreatment of the substrate;

growing an intermediate layer on the substrate after the pretreatment step; and

growing the semi-polar plane III-Nitride on the intermediate layer.

8. The method of claim 1, wherein the semi-polar plane III-Nitride is a planar epitaxial layer.

9. A device, wafer, substrate or template fabricated using the method of claim 1.

10. A method of growing a planar semi-polar plane III-Nitride epitaxial film, comprising:

growing semi-polar (11-22) or {10-13} III-Nitride on a suitable substrate using hydride vapor phase epitaxy (HVPE), comprising;

performing pretreatment of the substrate

growing an intermediate layer on the substrate after the annealing step; and

growing a planar epitaxial layer of the semi-polar plane III-Nitride on the intermediate layer.