LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
First Claim
1. A method of fabricating a patterned substrate for fabricating a light emitting diode (LED), comprising:
- forming an aluminum layer on a substrate;
forming an anodic aluminum oxide (AAO) layer having a large number of holes formed therein by performing an anodizing treatment of the aluminum layer;
partially etching a surface of the substrate using the aluminum layer with the large number of the holes as a shadow mask, thereby forming patterns; and
removing the aluminum layer from the substrate.
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Accused Products
Abstract
There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer
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Citations
12 Claims
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1. A method of fabricating a patterned substrate for fabricating a light emitting diode (LED), comprising:
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forming an aluminum layer on a substrate; forming an anodic aluminum oxide (AAO) layer having a large number of holes formed therein by performing an anodizing treatment of the aluminum layer; partially etching a surface of the substrate using the aluminum layer with the large number of the holes as a shadow mask, thereby forming patterns; and removing the aluminum layer from the substrate. - View Dependent Claims (2)
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3. A method of fabricating a vertical light emitting diode (LED), comprising:
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forming a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on a surface of the low doped first conductive semiconductor layer; forming an anodic aluminum oxide (AAO) layer having a large number of holes formed therein by performing an anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with the large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer from the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with the large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate from the low doped first conductive semiconductor layer; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer. - View Dependent Claims (4)
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5. A vertical light emitting diode (LED), comprising:
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a low doped first conductive semiconductor layer having a large number of grooves formed therein; a high doped first conductive semiconductor layer disposed on one surface of the low doped first conductive semiconductor layer, the high doped first conductive semiconductor layer being exposed by the large number of the grooves of the low doped first conductive semiconductor layer; an active layer and a second conductive semiconductor layer, disposed on one surface of the high doped first conductive semiconductor layer; a metal reflective layer and a conductive substrate, disposed on one surface of the second conductive semiconductor layer; and an electrode pad disposed on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer. - View Dependent Claims (6, 7)
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8. A method of fabricating a light emitting device having a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed therebetween formed on a substrate, the method comprising:
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forming the first conductive semiconductor layer on the substrate; forming an aluminum layer on the first conductive semiconductor layer; forming an anodic aluminum oxide (AAO) layer having a large number of holes formed therein by performing an anodizing treatment of the aluminum layer; etching and patterning the first conductive semiconductor layer using the aluminum layer with the large number of the holes as a shadow mask so that a portion of the first conductive semiconductor layer is etched; removing the aluminum layer from the first conductive semiconductor layer; forming the first conductive semiconductor layer on the etched first conductive semiconductor layer; and forming the active layer and the second conductive semiconductor layer on the first conductive semiconductor layer.
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9. A light emitting device, comprising:
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a substrate; a first conductive semiconductor layer disposed on the substrate; an active layer disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer disposed on the active layer, wherein the first conductive semiconductor layer comprises a large number of scattering centers formed of an air layer. - View Dependent Claims (10, 11)
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12. A method of forming an anodic aluminum oxide (AAO) shadow mask for etching a semiconductor layer, comprising:
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depositing an aluminum metal in a thickness on the semiconductor layer to form an aluminum layer having an exposed surface; depositing the aluminum layer in a first acid solution and applying a bias to the aluminum layer to oxidize inward from the exposed surface of the aluminum to form a large number of oxidized hollows inward from the exposed surface; applying a second acid solution to etch away the oxidized hollows in the aluminum layer to form a large number of holes in the aluminum layer extending to the semiconductor layer to form the AAO shadow mask; and etching the semiconductor layer in the large number of holes in the aluminum layer to form a pattern of holes in the semiconductor layer, wherein the holes have openings of 500 nm or less.
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Specification