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Cu-Mn Alloy Sputtering Target and Semiconductor Wiring

  • US 20100013096A1
  • Filed: 09/25/2007
  • Published: 01/21/2010
  • Est. Priority Date: 10/03/2006
  • Status: Abandoned Application
First Claim
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1. A Cu—

  • Mn alloy sputtering target, wherein the Mn content is 0.05 to 20 wt %, the total amount of Be, B, Mg, Al, Si, Ca, Ba, La, and Ce is 500 wtppm or less, and the remainder is Cu and unavoidable impurities.

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