MOSFET Switch with Embedded Electrostatic Charge
3 Assignments
0 Petitions
Accused Products
Abstract
A vertical device structure includes a volume of semiconductor material, laterally adjoining a trench having insulating material on sidewalls thereof. A gate electrode within the trench is capacitively coupled through the insulating material to a first portion of the semiconducting material. Some portions of the insulating material contain fixed electrostatic charge in a density high enough to invert a second portion of the semiconductor material when no voltage is applied. The inverted portions can be used as induced source or drain extensions, to assure that parasitic are reduced without increasing on-resistance.
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Citations
48 Claims
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1. (canceled)
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5. A device comprising:
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a trench having a dielectric material on sidewalls thereof; semiconductor material adjacent to said trench; a gate electrode capacitively coupled through said dielectric material to a first portion of said semiconductor material; a source electrode adjoining a second portion of said semiconductor material which adjoins said first portion of said semiconductor material; wherein said dielectric material has at least some portions containing fixed electrostatic charge with a charge density at least sufficient to deplete said second portion of said semiconductor material in the absence of applied voltage. - View Dependent Claims (2, 3, 4, 6, 7, 8)
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9-10. -10. (canceled)
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11. A semiconductor active device comprising:
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a source region of a first conductivity type, positioned in proximity to a first trench in semiconductor material; a second conductivity type body region at least partly underlying said source region, and at least partly adjoining said trench; an insulated gate electrode inside part of said trench, and capacitively coupled to said body region at a sidewall of said trench to controllably invert said body region at said sidewall and thereby allow majority carriers to flow from said source region through said body region; a distribution of net electrostatic charge located in said trench at at least some locations where said gate electrode is not present, in a density sufficient to invert at least part of said body region; and a first conductivity type drain region underlying at least part of said body region. - View Dependent Claims (12, 13, 14, 15, 18, 19, 20, 33, 34)
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16-17. -17. (canceled)
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21-32. -32. (canceled)
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35. -44. (canceled)
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45. A method for operating a semiconductor device, comprising the actions of:
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controlling majority carrier flow from a source region, through a body region and into a drift region, using voltages applied to a gate electrode which is capacitively coupled to at least part of said body region to define a channel therein; and statically inverting a portion of said body, using permanent electrostatic charge at a semiconductor/dielectric interface of said body region, to thereby form an induced source extension therein, which connects said source region to said channel. - View Dependent Claims (46, 47)
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48-49. -49. (canceled)
Specification