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PIXEL SENSOR CELL WITH FRAME STORAGE CAPABILITY

  • US 20100013973A1
  • Filed: 07/16/2008
  • Published: 01/21/2010
  • Est. Priority Date: 07/16/2008
  • Status: Active Grant
First Claim
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1. A semiconductor structure for an image sensor pixel, said semiconductor structure comprising:

  • a photosensitive diode structure;

    a first transistor including a diffusion region and a first channel, wherein said diffusion region is a source region of said first transistor and is of integral construction with a terminal of said photosensitive diode structure;

    a second transistor including a second channel located in proximity to said first channel, wherein said second channel is electrically coupled to said first channel to enable formation of a merged channel including said first channel and said second channel; and

    a plurality of frame transfer transistors including a plurality of frame transfer channels, wherein each of said plurality of frame transfer transistors is serially connected among one another and comprises a gate electrode and a frame transfer channel, and wherein each of said plurality of frame transfer channels is located in proximity with another of said plurality of frame transfer channels to enable formation of a merged channel including two neighboring frame transistor channels.

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