Lithographic Apparatus and Device Manufacturing Method

• US 20100014059A1
• Filed: 05/21/2009
• Published: 01/21/2010
• Est. Priority Date: 03/29/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Van Der Feltz, Gustaaf Willem, Hoefnagels, Johan Christiaan Gerard, Gui, Cheng-Qun
• Granted Patent: US 8,502,954 B2
• Time in Patent Office: Days
• US Class Current: 355/30
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70875 Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Abstract

A lithographic apparatus and method in which a system is used to emit a patterned beam. The patterned beam is projected onto a target portion of the surface of a substrate supported on a substrate support. The target portion has predetermined spatial characteristics relative to the substrate table that are appropriate for a desired exposure pattern on the surface of the substrate. The temperature of the substrate is measured, and the dimensional response of the substrate to the measured temperature is calculated. The spatial characteristics of the target portion relative to the substrate table are adjusted to compensate for the calculated dimensional response.

Claims

1. (canceled)

2. A lithographic apparatus, comprising:

a substrate support configured to support a substrate;

a projection system configured to project a patterned beam onto a target portion on a surface of the substrate, the target portion having predetermined spatial characteristics relative to the substrate support for a desired exposure pattern on the surface of the substrate support;

a temperature measuring system configured to measure a temperature of the substrate;

a calculating system configured to calculate a dimensional response of the substrate to the measured temperature; and

an adjusting system configured to adjust the spatial characteristics of the target portion relative to the substrate support to compensate for the calculated dimensional response.

3. The apparatus of claim 2, wherein the temperature measuring system comprises at least one sensor configured to measure the temperature of the substrate at each of a plurality of regions distributed across the surface of the substrate.

4. The apparatus of claim 2, wherein the temperature measuring system comprises a plurality of sensors distributed across the substrate support.

5. The apparatus of claim 4, wherein each sensor in the plurality of the sensors is configured to sense the temperature of each of a plurality of adjacent regions on the substrate.

6. The apparatus of claim 4, wherein each sensor in the plurality of the sensors is configured to sense the temperature of an adjacent region of the substrate support.

7. The apparatus of claim 2, wherein the temperature measuring system comprises:

a plurality of sensors distributed on a sensor support positioned above the substrate support; and

a scanning system that is arranged to displace the substrate support relative to the plurality of sensors and to measure the temperature of a plurality of regions of the substrate adjacent to each of the plurality of sensors at each of a plurality of relative positions between the substrate support and the support.

8. The apparatus of claim 7, wherein the plurality of sensors are supported on a stationary frame beneath which the sensor support is displaceable.

9. The apparatus of claim 7, wherein the plurality of sensors are supported in a linear array extending transversely relative to a direction in which the substrate support is displaceable.

10. The apparatus of claim 2, wherein:

the temperature measuring system comprises a substrate temperature mapping system configured to develop a map representative of the temperature at a plurality of regions of the substrate;

the calculating system comprises a system configured to develop a model of the dimensional response of the substrate in a substrate support coordinate system; and

the spatial characteristic adjusting system comprises;

a system configured to develop a map of a change in position of points on the substrate relative to the substrate support coordinate system given the mapped temperature at the plurality of regions of the substrate and the dimensional response model; and

a system configured to adjust spatial characteristics of the target portion in accordance with the change in position map to compensate for the calculated dimensional response.

11. The apparatus of claim 2, wherein the adjusting system comprises an image correction system configured to adjust a cross-sectional shape of the patterned beam to adjust a shape of the patterned beam projected on the target portion.

12. The apparatus according to claim 2, wherein the adjusting system comprises a beam alignment adjustment system configured to adjust the position of the target portion relative to the substrate support.

13. The apparatus according to claim 2, wherein the adjusting system comprises a beam magnification adjustment system configured to adjust a size of the target portion.

14. A device manufacturing method, comprising:

supporting a substrate on a substrate support;

projecting a patterned beam of radiation onto a target portion on a surface of the substrate, the target portion having spatial characteristics relative to the substrate support for a desired exposure patterned on the surface of the substrate supported in a predetermined position on the substrate support;

measuring a temperature of the substrate;

calculating a dimensional response of the substrate relative to the measured temperature; and

adjusting the spatial characteristics of the target portion relative to the substrate support to compensate for the calculated dimensional response.

15. The method of claim 14, wherein the temperature is measured at each of a plurality of regions distributed across the surface of the substrate.

16. The method of claim 14, wherein the temperature is measured with a plurality of sensors distributed across the substrate support, each of the plurality of sensors configured to sense the temperature of each of a plurality of adjacent regions on the substrate.

17. The method of claim 14, wherein:

a plurality of sensors are distributed on a sensor support located above the substrate support;

the substrate support and the plurality of sensors are displaced relative to each other; and

the temperature of a plurality of regions of the substrate adjacent to each of the plurality of sensors are measured at each of a plurality of relative positions between the substrate support and the sensor support.

18. The method of claim 17, wherein the plurality of sensors are supported on a stationary frame located above the substrate support, the substrate support displaced beneath the stationary frame.

19. The method of claim 18, wherein the substrate support is displaced in a predetermined direction and the plurality of sensors are supported in a linear array extending transverse to the predetermined direction.

20. The method of claim 14, wherein:

a map of the temperature across the substrate is developed;

a model of the dimensional response of the substrate in a substrate-support coordinate system is developed;

a substrate position map is developed comprising a change in position of points on the substrate relative to the substrate-support coordinate system based on the map of the temperature across the substrate and the model of the dimensional response; and

the spatial characteristics of the target portion are adjusted based on the substrate position map to compensate for the dimensional response.