METHOD FOR FORMING SRTIO3 FILM AND STORAGE MEDIUM

• US 20100015335A1
• Filed: 02/27/2008
• Published: 01/21/2010
• Est. Priority Date: 03/01/2007
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Kawano, Yumiko, Kakimoto, Akinobu
• Granted Patent: US 8,361,550 B2
• Time in Patent Office: Days
• US Class Current: 427/255.320
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/404 of alkaline earth metals
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/02197 the material having a perovskite structure, e.g. BaTiO3
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31691 with perovskite structure

Abstract

A substrate is arranged in a processing chamber, the substrate is heated, and an Sr material, a Ti material and an oxidizing agent are introduced into the processing chamber in the form of gas, the gases are reacted on the heated substrate, and an SrTiO₃ film is formed on the substrate. As the Sr material, an Sr amine compound or an Sr imine compound is used.

Claims

1. A method for forming an SrTiO₃ film, comprising the steps of:

placing a substrate in a processing chamber;

heating the substrate; and

introducing a gaseous Sr material, a gaseous Ti material and a gaseous oxidizing agent into the processing chamber,

wherein an Sr amine compound or an Sr imine compound is used as the Sr material, and the Sr material, the Ti material and the oxidizing agent are reacted with each other on the heated substrate to form an SrTiO₃ film on the substrate.

2. The method of claim 1, wherein a compound represented by C₂₄H₄₆N₄Sr or C₂₆H₅₀N₄Sr is used as the Sr material.

3. The method of claim 1, wherein the Sr material is heated to 100 to 200°

C. and supplied by bubbling.

4. The method of claim 1, wherein the Sr material is dissolved in a solvent, and heated to 100 to 200°

C. and vaporized in a vaporizer to be supplied into the processing chamber.

5. The method of claim 4, wherein the solvent is a long straight-chain hydrocarbon or a cyclic hydrocarbon.

6. The method of claim 5, wherein the solvent is octane or cyclohexane.

7. A method for forming an SrTiO₃ film, comprising the steps of:

placing a substrate in a processing chamber;

heating the substrate; and

introducing a gaseous Sr material, a gaseous Ti material and a gaseous oxidizing agent into the processing chamber,

wherein an Sr amine compound or an Sr imine compound is used as the Sr material,

wherein said introducing step includes the sub-steps of;

adsorbing the Ti material on the substrate by introducing the gaseous Ti material into the processing chamber;

forming a Ti-containing oxide film by introducing the gaseous oxidizing agent into the processing chamber to decompose the adsorbed Ti material;

adsorbing the Sr material on the Ti-containing oxide film by introducing the gaseous Sr material into the processing chamber; and

forming an Sr-containing oxide film by introducing the gaseous oxidizing agent into the processing chamber to decompose the adsorbed Sr material, and

wherein the sub-steps are repeated as one cycle several times to deposit thin films for respective cycles such that an SrTiO₃ film having a predetermined thickness is formed on the substrate.

8. The method of claim 7, further comprising the step of:

purging the processing chamber, between the sub-steps of adsorbing the Ti material, forming the Ti-containing oxide film, adsorbing the Sr material, and forming the Sr-containing oxide film.

9. The method of claim 7, wherein a compound represented by C₂₄H₄₆N₄Sr or C₂₆H₅₀N₄Sr is used as the Sr material.

10. The method of claim 7, wherein the Sr material is heated to 100 to 200°

C. and supplied by bubbling.

11. The method of claim 7, wherein the Sr material is dissolved in a solvent, and heated to 100 to 200°

C. and vaporized in a vaporizer to be supplied into the processing chamber.

12. The method of claim 11, wherein the solvent is a long straight-chain hydrocarbon or a cyclic hydrocarbon.

13. The method of claim 12, wherein the solvent is octane or cyclohexane.

14. A computer-readable storage medium storing a program which runs on a computer and, when executed, controls a film forming apparatus to perform a method for forming an SrTiO₃ film, the method including:

placing a substrate in a processing chamber;

heating the substrate; and

introducing a gaseous Sr material, a gaseous Ti material and a gaseous oxidizing agent into the processing chamber,

wherein an Sr amine compound or an Sr imine compound is used as the Sr material, and the Sr material, the Ti material and the oxidizing agent are reacted with each other on the heated substrate to form an SrTiO₃ film on the substrate.

15. A computer-readable storage medium storing a program which runs on a computer and, when executed, controls a film forming apparatus to perform a method for forming an SrTiO₃ film, the method including:

placing a substrate in a processing chamber;

heating the substrate; and

introducing a gaseous Sr material, a gaseous Ti material and a gaseous oxidizing agent into the processing chamber,

wherein an Sr amine compound or an Sr imine compound is used as the Sr material,

wherein said introducing step includes the sub-steps of;

adsorbing the Ti material on the substrate by introducing the gaseous Ti material into the processing chamber;

forming a Ti-containing oxide film by introducing the gaseous oxidizing agent into the processing chamber to decompose the adsorbed Ti material;

adsorbing the Sr material on the Ti-containing oxide film by introducing the gaseous Sr material into the processing chamber; and

forming an Sr-containing oxide film by introducing the gaseous oxidizing agent into the processing chamber to decompose the adsorbed Sr material, and

wherein the sub-steps are repeated as one cycle several times to deposit thin films for respective cycles such that an SrTiO₃ film having a predetermined thickness is formed on the substrate.