Double gate manufactured with locos techniques
First Claim
1. A method for manufacturing a trenched semiconductor power device comprising step of opening a trench in a semiconductor substrate and said method further comprising:
- opening a top portion of said trench first then depositing a SiN on sidewalls of said top portion followed by etching a bottom surface of said top portion of said trench then silicon etching to open a bottom portion of said trench with a slightly smaller width than said top portion of said trench.
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Accused Products
Abstract
This invention discloses a method for manufacturing a trenched semiconductor power device that includes step of opening a trench in a semiconductor substrate. The method further includes a step of opening a top portion of the trench first then depositing a SiN on sidewalls of the top portion followed by etching a bottom surface of the top portion of the trench then silicon etching to open a bottom portion of the trench with a slightly smaller width than the top portion of the trench. The method further includes a step of growing a thick oxide layer along sidewalls of the bottom portion of the trench thus forming a bird-beak shaped layer at an interface point between the top portion and bottom portion of the trench.
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Citations
9 Claims
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1. A method for manufacturing a trenched semiconductor power device comprising step of opening a trench in a semiconductor substrate and said method further comprising:
opening a top portion of said trench first then depositing a SiN on sidewalls of said top portion followed by etching a bottom surface of said top portion of said trench then silicon etching to open a bottom portion of said trench with a slightly smaller width than said top portion of said trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
Specification