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Double gate manufactured with locos techniques

  • US 20100015770A1
  • Filed: 09/18/2009
  • Published: 01/21/2010
  • Est. Priority Date: 05/29/2007
  • Status: Abandoned Application
First Claim
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1. A method for manufacturing a trenched semiconductor power device comprising step of opening a trench in a semiconductor substrate and said method further comprising:

  • opening a top portion of said trench first then depositing a SiN on sidewalls of said top portion followed by etching a bottom surface of said top portion of said trench then silicon etching to open a bottom portion of said trench with a slightly smaller width than said top portion of said trench.

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