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MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

  • US 20100015797A1
  • Filed: 08/25/2006
  • Published: 01/21/2010
  • Est. Priority Date: 08/26/2005
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device having a process of embedding a conductive film mainly composed of tungsten inside a groove formed in a silicon wafer and a silicon oxide film on the silicon wafer, the method comprising the steps of:

  • (a) depositing a first titanium nitride film covering at least a surface of the silicon oxide film by a sputtering method after forming the groove in the silicon wafer and the silicon oxide film on the silicon wafer;

    (b) depositing a titanium film covering a surface of the first titanium nitride film and a surface of the silicon wafer exposed inside the groove and having a film thickness equal to or less than half of a diameter of the groove;

    (c) depositing a second titanium nitride film covering a surface of the titanium film and having a total film thickness of the second titanium nitride film and the titanium film equal to or less than half of the diameter of the groove; and

    (d) depositing a tungsten film to be embedded inside of the groove after the step (c).

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