MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• US 20100015797A1
• Filed: 08/25/2006
• Published: 01/21/2010
• Est. Priority Date: 08/26/2005
• Status: Active Grant

• Current Assignee: Hitachi, Ltd., Honda Motor Co., Ltd. (Honda Motor Company)
• Original Assignee: Hitachi, Ltd., Honda Motor Co., Ltd. (Honda Motor Company)
• Inventors: Otaguro, Akira, Takahira, Yoshiya, Otake, Manabu, Katagiri, Namio, Miyakawa, Nobuaki, Saito, Toshio
• Granted Patent: US 7,795,137 B2
• Time in Patent Office: Days
• US Class Current: 438/637
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 21/823871 interconnection or wiring or contact manufacturing related aspects
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/0694 comprising components formed on opposite sides of a semiconductor substrate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

When a tungsten film (43) is embedded inside of a conductive groove (4A) formed in a wafer (W2) and a silicon oxide film (36) thereon and having a high aspect ratio, film formation and etch back of the tungsten film (43) are successively performed in a chamber of the same apparatus, therefore, a film thickness of the tungsten film (43) deposited in one film formation step is made to be thin. Whereby problems, such as exfoliation of the tungsten film (43), generation of micro-cracks, and occurrence of warpage and cracks of the wafer (W2), are avoided.

Claims

1. A method of manufacturing a semiconductor device having a process of embedding a conductive film mainly composed of tungsten inside a groove formed in a silicon wafer and a silicon oxide film on the silicon wafer, the method comprising the steps of:

(a) depositing a first titanium nitride film covering at least a surface of the silicon oxide film by a sputtering method after forming the groove in the silicon wafer and the silicon oxide film on the silicon wafer;

(b) depositing a titanium film covering a surface of the first titanium nitride film and a surface of the silicon wafer exposed inside the groove and having a film thickness equal to or less than half of a diameter of the groove;

(c) depositing a second titanium nitride film covering a surface of the titanium film and having a total film thickness of the second titanium nitride film and the titanium film equal to or less than half of the diameter of the groove; and

(d) depositing a tungsten film to be embedded inside of the groove after the step (c).

2. The method of manufacturing the semiconductor device according to claim 1,

wherein the step (d) is performed by alternately repeating the deposition of the tungsten film and etch back of the tungsten film outside of the groove at a plurality of times.

3. The method of manufacturing the semiconductor device according to claim 2,

wherein the etch back of the tungsten film is performed by using the first titanium nitride film covering the surface of the silicon oxide film as a stopper of etching.

4. The method of manufacturing the semiconductor device according to claim 3,

wherein a film thickness of the first titanium nitride film outside of the groove is larger than each film thickness of the titanium film and the second titanium nitride film.

5. The method of manufacturing the semiconductor device according to claim 2,

wherein the step (d) uses a manufacturing apparatus having a chamber including wafer-holding means for holding the silicon wafer in a heated state and a wafer-fixing means for fixing the silicon wafer held by the wafer-holding means, and

the deposition of the tungsten film and the etch back of the tungsten film are successively performed in the chamber.

6. The method of manufacturing the semiconductor device according to claim 5,

wherein the deposition of the tungsten film and the etch back of the tungsten film are successively performed in a state where the silicon wafer is held by the wafer-holding means.

7. The method of manufacturing the semiconductor device according to claim 5,

wherein, after the tungsten film is deposited in a state where the silicon wafer is heated, the etch back of the tungsten film is performed before a surface temperature of the silicon wafer returns to normal temperature.

8. The method of manufacturing the semiconductor device according to claim 1,

wherein the titanium film, the second titanium nitride film, or the tungsten film is deposited by a CVD method.

9. The method of manufacturing the semiconductor device according to claim 1,

wherein an aspect ratio of the groove is larger than or equal to 20.

10. A method of manufacturing a semiconductor device including a process of embedding a conductive film inside of a groove formed in a silicon wafer and an insulating film on the silicon wafer, the method comprising the steps of:

(a) forming a first adhesive layer having a higher adhesiveness to the insulating film than that of the conductive film so as to cover at least a surface of the insulating film after forming the groove in the silicon wafer and the insulating film on the silicon wafer;

(b) after the step (a), forming a second adhesive layer having a higher adhesiveness to the silicon wafer than that of the conductive film and having a film thickness equal to or less than half of a diameter of the groove so as to cover at least a surface of the silicon wafer exposed inside the groove;

(c) forming a barrier layer having a higher adhesiveness to the conductive film than that of the second adhesive layer and having a function of preventing a reaction between the silicon wafer and the conductive film so as to cover a surface of the second adhesive layer and to make a total film thickness of the barrier layer and the second adhesive layer to be equal to or less than half of the diameter of the groove; and

(d) after the step (c), forming the conductive film to be embedded inside the groove.

11. The method of manufacturing the semiconductor device according to claim 10,

wherein the step (d) is performed by alternately repeating the deposition of the conductive film and etch back of the tungsten film outside of the groove at a plurality of times.

12. The method of manufacturing the semiconductor device according to claim 11,

wherein the deposition of the conductive film and the etch back of the tungsten film outside of the groove are successively performed in a chamber of a manufacturing apparatus, the chamber includes a wafer-holding means for holding the silicon wafer in a heated state and a wafer-fixing means for fixing the silicon wafer held by the wafer-holding means, and after the conductive film is deposited in a state where the silicon wafer is heated, the etch back of the conductive film is performed before a surface temperature of the silicon wafer returns to normal temperature.

13. The method of manufacturing the semiconductor device according to claim 11,

wherein the insulating film is an insulating film mainly composed of silicon oxide, the first adhesive layer is a titanium nitride film deposited by a sputtering method, the second adhesive layer is a titanium film deposited by a CVD method, and the conductive film is a tungsten film deposited by the CVD method.