DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE
First Claim
1. A method of manufacturing a MOSFET device for regulating a flow of electrical current, the method comprising:
- providing a gate electrode on a semiconductor substrate;
exposing the semiconductor substrate in an area proximal to the gate electrode;
etching the semiconductor substrate on the exposed area using an at least partially isotropic etch;
depositing a thin film of metal in the etched area of the semiconductor substrate; and
reacting the metal with the semiconductor substrate such that at least one of a Schottky or Schottky-like source electrode and drain electrode is formed.
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Abstract
A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.
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Citations
17 Claims
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1. A method of manufacturing a MOSFET device for regulating a flow of electrical current, the method comprising:
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providing a gate electrode on a semiconductor substrate; exposing the semiconductor substrate in an area proximal to the gate electrode; etching the semiconductor substrate on the exposed area using an at least partially isotropic etch; depositing a thin film of metal in the etched area of the semiconductor substrate; and reacting the metal with the semiconductor substrate such that at least one of a Schottky or Schottky-like source electrode and drain electrode is formed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing a device for regulating a flow of electrical current, the method comprising:
exposing a semiconductor substrate in an area proximal to a gate electrode;
etching the semiconductor substrate on the exposed area using an at least partially isotropic etch; and
depositing and thermally annealing a thin film of metal with the semiconductor substrate such that a Schottky or Schottky-like source electrode and drain electrode is formed.- View Dependent Claims (14, 15, 16, 17)
Specification