METHODS TO PROMOTE ADHESION BETWEEN BARRIER LAYER AND POROUS LOW-K FILM DEPOSITED FROM MULTIPLE LIQUID PRECURSORS
First Claim
1. A method of processing a substrate, comprising:
- positioning the substrate on a support in a processing chamber;
providing a first organosilicon precursor to the chamber at a first flow rate;
providing a second organosilicon precursor comprising to the chamber at a second flow rate;
providing a hydrocarbon mixture to the chamber at a third flow rate;
providing an oxidizing agent to the chamber at a fourth flow rate;
ramping the second flow rate of the second organosilicon precursor to a higher flow rate;
ramping the flow rate of the oxidizing agent to a higher flow rate; and
diverting the hydrocarbon mixture to bypass the chamber for at least part of the time the substrate is being processed.
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Accused Products
Abstract
A method for processing a substrate is provided, wherein a first organosilicon precursor, a second organosilicon precursor, a porogen, and an oxygen source are provided to a processing chamber. The first organosilicon precursor comprises compounds having generally low carbon content. The second organosilicon precursor comprises compounds having higher carbon content. The porogen comprises hydrocarbon compounds. RF power is applied to deposit a film on the substrate, and the flow rates of the various reactant streams are adjusted to change the carbon content as portions of the film are deposited. In one embodiment, an initial portion of the deposited film has a low carbon content, and is therefore oxide-like, while successive portions have higher carbon content, becoming oxycarbide-like. Another embodiment features no oxide-like initial portion. Post-treating the film generates pores in portions of the film having higher carbon content.
33 Citations
20 Claims
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1. A method of processing a substrate, comprising:
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positioning the substrate on a support in a processing chamber; providing a first organosilicon precursor to the chamber at a first flow rate; providing a second organosilicon precursor comprising to the chamber at a second flow rate; providing a hydrocarbon mixture to the chamber at a third flow rate; providing an oxidizing agent to the chamber at a fourth flow rate; ramping the second flow rate of the second organosilicon precursor to a higher flow rate; ramping the flow rate of the oxidizing agent to a higher flow rate; and diverting the hydrocarbon mixture to bypass the chamber for at least part of the time the substrate is being processed. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of processing a substrate, comprising:
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providing a plurality of gas mixtures comprising silicon, carbon, oxygen, and hydrogen to a processing chamber, wherein at least two of the gas mixtures are silicon sources; providing plasma processing conditions by applying RF power to the processing chamber; reacting at least a portion of the gas mixtures to deposit a film on the substrate; and adjusting the carbon content in portions of the deposited film by adjusting a ratio of carbon to silicon atoms in the processing chamber during application of RF power. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of depositing a low-k dielectric film on a substrate disposed in a processing chamber, comprising:
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providing a first gas mixture comprising one or more compounds having —
Si—
Cx—
Si—
or —
Si—
Cx—
O—
Si—
bonds, and having a ratio of carbon to silicon atoms less than about 6;
1, to the processing chamber;with the first gas mixture, providing a second gas mixture comprising one or more compounds having —
Si—
Cx—
Si—
or —
Si—
O—
Cx—
O—
Si—
bonds, and having a ratio of carbon to silicon atoms greater than about 8;
1, to the processing chamber;providing a third gas mixture comprising one or more hydrocarbon compounds to the processing chamber, at least one of the one or more hydrocarbon compounds having thermally labile groups, to the processing chamber; providing a fourth gas mixture comprising oxygen sources to the processing chamber; applying RF power and reacting at least a portion of the gas mixtures to deposit a film on the substrate; while applying RF power, adjusting the amounts of one or more of the gas mixtures containing carbon to change the deposition rate of carbon in the film; and post-treating the deposited film to lower the dielectric constant of the film. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification