METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS
First Claim
1. An apparatus for processing a substrate, comprising:
- a processing chamber having a substrate support disposed therein;
an energy source suitable for emitting UV energy;
a window positioned to allow UV energy emitted from the source to reach a substrate disposed on the substrate support; and
a means for controlling at least one of the wavelength, angle of incidence, or cycle of UV energy directed towards the substrate support.
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Accused Products
Abstract
Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.
460 Citations
20 Claims
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1. An apparatus for processing a substrate, comprising:
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a processing chamber having a substrate support disposed therein; an energy source suitable for emitting UV energy; a window positioned to allow UV energy emitted from the source to reach a substrate disposed on the substrate support; and a means for controlling at least one of the wavelength, angle of incidence, or cycle of UV energy directed towards the substrate support. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A chamber for processing semiconductor substrates, comprising:
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a substrate support disposed inside the chamber; a window disposed in a lid of the chamber; a photoexcitation system positioned above the window; and an apertured baffle plate disposed between the window and the substrate support. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. An apparatus for processing a semiconductor substrate, comprising:
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a chamber with a lid; a substrate support disposed in the chamber and facing the lid; a source of UV energy comprising a housing and a lamp coupled to the lid; a window disposed in the lid between the UV source and the substrate support; a baffle plate coupled to the lid, and together with the lid cooperatively defining a purge gas pathway across a surface of the window; and a purge gas source coupled to the lid in fluid communication with the purge gas pathway. - View Dependent Claims (20)
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Specification