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Light emitting device using gan led chip

  • US 20100019247A1
  • Filed: 10/05/2007
  • Published: 01/28/2010
  • Est. Priority Date: 10/05/2006
  • Status: Active Grant
First Claim
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1. A light emitting device wherein a GaN-based LED chip of the following (a) is flip-chip mounted:

  • (a) a GaN-based LED chip comprising a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, the GaN-based semiconductor layer having a laminate structure comprising an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side,wherein a positive electrode is formed on the p-type layer, said electrode comprisinga light-transmissive electrode composed of an oxide semiconductor anda positive contact electrode electrically connected to the light-transmissive electrode, andthe area of the positive contact electrode is less than ½

    of the area of the upper surface of the p-type layer.

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