ROUGH STRUCTURE OF OPTOELECTRONIC DEVICE AND FABRICATION THEREOF
First Claim
1. A rough structure of an optoelectronic device, comprising:
- a plurality of islands distributed over a semiconductor layer of an optoelectronic device; and
a plurality of pin holes distributed on the tops and sidewalls of said plurality of islands.
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Abstract
A dual-scale rough structure, in which a plurality of islands are grown on a semiconductor layer by heavily doping a dopant during epitaxy of a semiconductor layer of an optoelectronics device, is provided. A plurality of pin holes are formed on the islands by lowering the epitaxial temperature. The pin holes are distributed over the top and sidewall surfaces of the islands so that the total internal reflection within the optoelectronics device can be significantly reduced so as to enhance the brightness thereof. Compared with traditional technologies, the process method of the present invention has the advantages of producing less pollution, being able to perform easily, reducing manufactured cost, increasing the efficiency of light extraction, and increasing the effective area of the dual-scale emitting surface, which is not a smooth surface, of the structure.
35 Citations
20 Claims
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1. A rough structure of an optoelectronic device, comprising:
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a plurality of islands distributed over a semiconductor layer of an optoelectronic device; and a plurality of pin holes distributed on the tops and sidewalls of said plurality of islands. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A rough surface of an optoelectronic device, comprising:
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a first rough surface formed on the surface of said optoelectronic device; and a second rough surface formed on said first rough surface, wherein the scale of said second rough surface is greater than or equal to one eighth of the wavelength of the light from said optoelectronic device. - View Dependent Claims (9, 10, 11, 12)
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13. A method for fabricating a rough structure of an optoelectronic device, comprising steps of:
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forming a semiconductor layer; heavily doping a dopant to form an island array on said semiconductor layer; and decreasing an epitaxial temperature to form an array of pin holes, wherein the diameter of each pin hole is greater than or equal to one-eighth of the wavelength of the light from said optoelectronic device, and said array of pin holes is distributed randomly on the top and sidewall of said island array. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification