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ALL AROUND GATE TYPE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

  • US 20100019276A1
  • Filed: 11/06/2008
  • Published: 01/28/2010
  • Est. Priority Date: 07/25/2008
  • Status: Active Grant
First Claim
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1. An all around gate type semiconductor device comprising:

  • a vertical channel pillar formed over a silicon substrate and comprising germanium;

    a silicon layer surrounding the vertical channel pillar; and

    a gate electrode surrounding the silicon layer.

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