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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20100019312A1
  • Filed: 07/28/2009
  • Published: 01/28/2010
  • Est. Priority Date: 07/28/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor region;

    a tunnel insulating film formed on a surface of the semiconductor region;

    a charge-storage insulating film formed on a surface of the tunnel insulating film and containing silicon and nitrogen;

    a block insulating film formed on a surface of the charge-storage insulating film; and

    a control gate electrode formed on a surface of the block insulating film,wherein the tunnel insulating film has a first insulating film formed on the surface of the semiconductor region and containing silicon and oxygen, a second insulating film formed on a surface of the first insulating film, and a third insulating film formed on a surface of the second insulating film and containing silicon and oxygen, anda charge trap state in the second insulating film has a lower density than that in the charge-storage insulating film.

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