FLASH MEMORY DEVICE WITH REDUNDANT COLUMNS
First Claim
1. An apparatus comprising:
- a memory block having a plurality of columns, each of the columns comprising a bit line and a plurality of memory cells, the plurality of columns including a plurality of groups of regular columns and a plurality of groups of redundant columns;
a plurality of groups of data latches, each of the groups of data latches being configured to store data read from a respective one group of regular columns;
a plurality of groups of redundant data latches, each of the groups of redundant data latches being configured to store data read from a respective one group of redundant columns; and
a multiplexer configured to selectively output data from the plurality of groups of data latches and the plurality of groups of redundant data latches,wherein the apparatus is configured to assign a redundant column in one of the groups of redundant columns to replace a defective regular column in any one of the groups of regular columns.
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Accused Products
Abstract
Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of columns. Each of the columns includes a bit line and a plurality of memory cells on the bit line. The plurality of columns include a plurality of groups of regular columns and a plurality of groups of redundant columns. The apparatus also includes a plurality of data latches. Each of the data latches is configured to store data read from a respective one group of regular columns. The apparatus further includes a plurality of redundant data latches. Each of the redundant data latches is configured to store data read from a respective one group of redundant columns. The apparatus also includes a multiplexer configured to selectively output data from the plurality of data latches and the plurality of redundant data latches.
14 Citations
25 Claims
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1. An apparatus comprising:
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a memory block having a plurality of columns, each of the columns comprising a bit line and a plurality of memory cells, the plurality of columns including a plurality of groups of regular columns and a plurality of groups of redundant columns; a plurality of groups of data latches, each of the groups of data latches being configured to store data read from a respective one group of regular columns; a plurality of groups of redundant data latches, each of the groups of redundant data latches being configured to store data read from a respective one group of redundant columns; and a multiplexer configured to selectively output data from the plurality of groups of data latches and the plurality of groups of redundant data latches, wherein the apparatus is configured to assign a redundant column in one of the groups of redundant columns to replace a defective regular column in any one of the groups of regular columns. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of reading data from a flash memory device comprising a memory block, wherein the memory block includes a plurality of rows and a plurality of columns, each of the columns comprising a bit line and a plurality of memory cells, the plurality of columns including a plurality of groups of regular columns and a plurality of groups of redundant columns, each of the rows comprising a word line and a plurality of the memory cells coupled to the word line, the method comprising:
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selecting a row of the memory block; sequentially latching a first set of data digits from a first group of regular columns in the memory block; sequentially latching a second set of data digits from a second group of regular columns in the memory block; latching a data digit from a redundant column in one of the groups of redundant columns in the memory block, the redundant column being configured to replace a defective column in either the first or second group of regular columns; and sequentially outputting the latched data digits, wherein sequentially outputting the latched data digits comprises multiplexing the first and second sets of data digits and the data digit from the redundant column. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A method of manufacturing a flash memory device, the method comprising:
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testing a flash memory device comprising; a memory block including a plurality of columns, each of the columns including a bit line and a plurality of memory cells on the bit line, the plurality of columns including a plurality of groups of regular columns and a plurality of groups of redundant columns; a plurality of groups of data latches, each of the data latches being configured to store data read from a respective group of regular columns; a plurality of groups of redundant data latches, each of the redundant data latches being configured to store data read from a respective group of redundant columns; and a multiplexer configured to selectively output data from the plurality of groups of data latches and the plurality of groups of redundant data latches; identifying a defective column in each of the groups of regular columns; and assigning a redundant column in any one of the plurality of groups of redundant columns to replace the defective column. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification