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NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM

  • US 20100020618A1
  • Filed: 07/07/2009
  • Published: 01/28/2010
  • Est. Priority Date: 07/22/2008
  • Status: Active Grant
First Claim
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1. A nonvolatile memory device comprising:

  • a plurality of memory cells connected to a wordline and arranged in a row direction;

    bitlines connected to the plurality of memory cells, respectively; and

    a bitline bias circuit configured to separately control bias voltages applied to the bitlines according to respective locations of the memory cells along the row direction.

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