DRY ETCH STOP PROCESS FOR ELIMINATING ELECTRICAL SHORTING IN MRAM DEVICE STRUCTURES
First Claim
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1. A process for fabricating a device wherein the device comprising a top conductive layer over an insulating layer over a substrate, the process comprising:
- (a) removing a portion of the top conductive layer; and
(b) selectively removing the remaining top conductive layer with respect to the underlying insulating layer.
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Abstract
The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.
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Citations
39 Claims
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1. A process for fabricating a device wherein the device comprising a top conductive layer over an insulating layer over a substrate, the process comprising:
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(a) removing a portion of the top conductive layer; and (b) selectively removing the remaining top conductive layer with respect to the underlying insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A process for fabricating a device comprising:
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(a) providing a substrate; (b) forming an insulating layer over the substrate; (c) forming a top conductive layer over the insulating layer; (d) removing a portion of the top conductive layer; and (e) selectively removing the remaining top conductive layer with respect to the underlying insulating layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A process for fabricating a device comprising:
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(a) providing a substrate; (b) forming an insulating layer over the substrate; (c) forming a top conductive layer over the insulating layer; (d) removing a portion of the top conductive layer; and (e) applying a bias to the substrate with bias power between the sputter threshold of the top conductive layer and the insulating layer to selectively remove the top conductive layer with respect to the underlying insulating layer. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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Specification